Chip Arrangement Pillar Interconnects for Stress Distribution

The conductive interconnect structure is divided into multiple segments: a first conductive interconnect formed on the bonding pad, a second conductive interconnect formed on the first, and an optional third conductive interconnect formed on the second. This segmentation distributes mechanical stress across multiple smaller components rather than concentrating it in a single interconnect, thereby reducing the probability of complete connection failure and improving overall reliability.

The patent employs multiple layers of conductive interconnects and optional insulating layers with voids between them, creating a cushioning effect that absorbs and distributes mechanical stress before it can propagate through the entire connection path. This prior cushioning structure prevents stress concentration that would otherwise lead to interconnect breakage.

The multi-layer conductive interconnect structure serves multiple functions simultaneously: it provides electrical connectivity between bonding pads and chip-external connection regions, distributes mechanical stress to prevent breakage, and can be configured in various patterns to accommodate different bonding pad densities. This universal structure handles both low and high density scenarios without requiring fundamentally different designs.

The patent transitions from a planar (2D) single-layer interconnect to a three-dimensional (3D) multi-layer interconnect structure. By adding the vertical dimension with multiple stacked conductive layers, the design accommodates higher bonding pad densities while maintaining reliable connections, as the additional layers provide redundant pathways and stress distribution in the vertical dimension.