Chip Plasma Dicing and Chamfering for Stronger Edge Corners
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Solution Overview
Problem
Chips manufactured by dividing a substrate using laser beams or blades often have weak edge corners that are prone to damage during collisions.
Innovation Solution
A method involving forming a protective film on a substrate, removing it along dicing lines, and using plasma-etching with the film as a mask to divide and chamfer the chips, optimizing etching conditions for both processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If chips are divided by laser beam or blade cutting, then manufacturing efficiency is improved, but edge corner strength deteriorates making chips prone to damage
Solution Approach 1:
A protective film is formed on the substrate before the dicing process. This preliminary action ensures that the edge corners are protected during division, preventing the strength deterioration that would otherwise occur with conventional laser or blade cutting methods.
Solution Approach 2:
The patent replaces conventional mechanical dicing methods (blade cutting) or thermal methods (laser beam) with plasma etching. This substitution allows for precise division while maintaining edge corner strength, as plasma etching can be controlled to avoid the mechanical stress and thermal damage associated with traditional methods.
2Manufacturing precision
If protective film is removed along dicing lines before division, then division precision is improved, but additional process steps increase manufacturing complexity
Solution Approach 1:
The protective film serves multiple functions: it protects the substrate during handling, acts as a mask during plasma etching for precise division, and can be selectively removed to define dicing lines. This multi-functionality improves division precision without requiring separate marking or alignment processes.
Solution Approach 2:
The protective film pattern itself defines the dicing lines through selective removal. The film's presence and absence automatically indicate where division should occur, eliminating the need for separate alignment marks or complex positioning systems.
3Reliability
If plasma etching is used for both division and chamfering, then chip durability is improved, but process time increases
Solution Approach 1:
The patent combines the division process and chamfering process into a single plasma etching step. By carefully controlling the etching parameters and using the protective film pattern appropriately, both the dicing lines and the chamfered edges are formed simultaneously, improving chip durability without requiring separate processing steps.
Solution Approach 2:
The patent uses different plasma etching parameters (such as gas flow rates, power levels, and pressure) to achieve different etching rates and profiles. By adjusting these parameters, the same plasma process can perform both precise division and chamfering, eliminating the need for separate processes with different parameter sets.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the durability of chip edges by chamfering, reducing the risk of damage and improving operational efficiency in the manufacturing process.
Implementation Method 1
dividing the substrate into the plurality of chips along the predetermined dicing lines by performing plasma-etching using the protective film remaining on the surface of the substrate as a mask
Data Source
AI summary
A chip manufacturing method for manufacturing a plurality of chips by dividing a substrate along predetermined dicing lines includes forming a protective film on a surface of the substrate; removing the protective film along the predetermined dicing lines; dividing the substrate into the plurality of chips along the predetermined dicing lines by performing plasma-etching using the protective film remaining on the surface of the substrate as a mask; and chamfering peripheral regions of the chips by performing plasma-etching using the protective film as a mask.