Optoelectronic Chip Rear-Side Scattering for Light Extraction
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Solution Overview
Problem
Optoelectronic semiconductor chips face inefficiencies in radiation emission or absorption due to total internal reflection and structural modifications on the radiation side, which can increase operating voltages and reduce performance.
Innovation Solution
Structuring the semiconductor layer sequence on the rear side with scattering structures and a mirror to redirect radiation, while maintaining a smooth radiation side for optimal layer properties, and using a planarization layer to enhance reflectivity and scattering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If structural modifications are made on the radiation side to improve radiation emission, then radiation emission efficiency is improved, but operating voltage increases and performance deteriorates
Solution Approach 1:
Instead of modifying the radiation side structure to improve radiation emission, the patent inverts the approach by modifying the rear side structure. Scattering structures and mirror elements are introduced on the rear side to redirect trapped radiation back toward the active layer, achieving improved radiation emission efficiency without modifying the radiation side contact structures, thus avoiding increased operating voltage.
Solution Approach 2:
The patent addresses radiation trapping by adding structural elements in a different spatial dimension - the rear side of the semiconductor chip. By implementing scattering structures and mirrors on the rear side rather than on the radiation side, the solution operates in an underutilized spatial dimension to achieve the desired optical effect without compromising electrical performance.
2Use of energy by moving object
If scattering structures are introduced to reduce radiation trapping, then radiation emission efficiency is improved, but structural complexity increases
Solution Approach 1:
The patent extracts the radiation management function from the radiation side contact structures and relocates it to the rear side of the semiconductor chip. By taking out the scattering and reflection functions and implementing them separately on the rear side, the solution reduces radiation trapping without complicating the radiation side contact structures, thus balancing efficiency improvement with structural simplicity.
3Reliability
If the radiation side is kept smooth to maintain optimal layer properties, then electrical performance is maintained, but radiation trapping occurs
Solution Approach 1:
The patent segments the radiation management function from the electrical contact function. The radiation side contact structures remain smooth for optimal electrical performance, while the rear side is equipped with scattering structures and mirrors to address radiation trapping. This segmentation allows each side to be optimized for its primary function without compromise.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces radiation trapping, maintains optimal radiation side properties, and improves the overall efficiency of the semiconductor chip by redistributing radiation and optimizing current expansion layers.
Implementation Method 1
The rear side is structured and includes scattering structures which are configured to scatter and redirect the primary radiation
Implementation Method 2
In the intended operation of the semiconductor chip, a mirror which is specular for the primary radiation is arranged on the rear side
Data Source
AI summary
In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with a radiation side, a first semiconductor layer of a first conductivity type, an active layer, a second semiconductor layer of a second conductivity type, and a rear side, which are arranged one above the other in this order. The active layer generates or absorbs primary electromagnetic radiation in the intended operation. Further, the optoelectronic semiconductor chip comprises a first contact structure and a second contact structure for electrically contacting the semiconductor layer sequence. The second contact structure is arranged on the rear side and is in electrical contact with the second semiconductor layer. The radiation side is configured for coupling in or coupling out primary radiation into or out of the semiconductor layer sequence. The rear side is structured and includes scattering structures configured to scatter and redirect the primary radiation.