Semiconductor Chip Recess Structure for Controlled Light Emission
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Solution Overview
Problem
Existing methods for producing radiation-emitting semiconductor chips are not cost-effective and do not allow for easy monitoring of the chip's properties, particularly in terms of electromagnetic radiation emission direction and efficiency.
Innovation Solution
A method involving the creation of a first recess in the semiconductor layer sequence that penetrates the active area, followed by the introduction of a first structure within this recess, which is angled to control the propagation direction of electromagnetic radiation, allowing for efficient emission without complex structuring, using materials with specific refractive indices to achieve precise deflection and reflection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If complex structuring methods are used to control radiation emission direction, then emission direction control is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The patent changes the refractive index parameter by introducing a dielectric material with refractive index n=1.5 into the recess, creating an optical interface that automatically reflects radiation at a 90-degree angle without complex structuring. This parameter-based solution replaces geometric complexity with material property control.
Solution Approach 2:
The dielectric material acts as an intermediary between the semiconductor layer and the external environment, mediating the radiation emission direction through refractive index mismatch. This intermediary enables simple control of radiation direction without requiring complex structural arrangements.
2Ease of manufacture
If simple production methods are used, then manufacturing cost is reduced, but monitoring capabilities of chip properties deteriorate
Solution Approach 1:
The recess structure with dielectric material serves dual functions: it controls radiation emission direction while simultaneously providing an accessible surface for monitoring chip properties. The same structural element that directs radiation also enables measurement access, making the system self-sufficient.
3Area of stationary object
If the first structure is placed close to the active area, then space utilization is improved, but radiation reflection efficiency decreases
Solution Approach 1:
The solution moves from horizontal placement considerations to vertical dimension by creating a recess into the semiconductor layer. This allows the dielectric material to be positioned in the vertical dimension while maintaining optimal horizontal spacing, achieving both space utilization and reflection efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables cost-effective production of semiconductor chips that can emit electromagnetic radiation in a controlled direction, with high reflection and deflection efficiency, reducing complexity and enhancing monitoring capabilities.
Implementation Method 1
An interface of the first structure with a dielectric material, having an index of refraction of n=1.5, is arranged spaced apart in lateral directions from the active area. At least one lateral surface of the first structure facing toward the active area extends obliquely to at least one first lateral surface of the semiconductor layer sequence... the interface of the first structure with the dielectric material predetermines a propagation direction for the electromagnetic radiation
Data Source
AI summary
Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: —providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, —producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, —producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.