Semiconductor Chip Recess Structure for Reflectivity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor chips face challenges in efficiently controlling and optimizing the reflectivity and isolation of electromagnetic radiation, particularly in semiconductor laser diodes and superluminescent light-emitting diodes, leading to variations in performance and yield.
Innovation Solution
The semiconductor chip design incorporates a recess that penetrates the active region, with specific reflectivity settings in different end regions and the use of dielectric and reflective layers to control radiation, along with a method for precise layer deposition and singulation to achieve consistent performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a recess is introduced to control reflectivity and isolation, then radiation control and production yield are improved, but device complexity increases
Solution Approach 1:
The semiconductor chip is divided into distinct functional regions: a first end region with a highly reflective mirror layer, a second end region with a low-reflectivity surface, and an intermediate region containing the active region. This segmentation allows each region to be optimized independently for its specific function, achieving consistent radiation control while maintaining manufacturability through standardized regional design.
Solution Approach 2:
Different surface properties are applied to different regions of the semiconductor chip. The first end region has a highly reflective mirror layer with reflectivity ≥90%, the second end region has a low-reflectivity surface with reflectivity ≤10%, and the intermediate region has tailored optical properties. This local differentiation enables precise control of radiation behavior in each zone without requiring complex global modifications.
2Manufacturing precision
If multiple layers are deposited to achieve specific reflectivity, then radiation isolation and performance consistency are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent specifies concrete parameter ranges for layer deposition: mirror layer thickness of 50-200 nm, intermediate layer thickness of 100-500 nm, and buffer layer thickness of 10-50 nm. By defining these parameter ranges, the invention achieves consistent reflectivity control (≥90% for mirror, ≤10% for low-reflectivity surface) while providing clear manufacturing guidelines that balance precision requirements with production feasibility.
3Stability of the object's composition
If the active region is isolated from end regions, then thermal variations are compensated and performance is stabilized, but device complexity increases
Solution Approach 1:
An intermediate region is introduced between the active region and the end regions, serving as a buffer zone with tailored optical and thermal properties. This intermediate region has reflectivity and absorption characteristics that gradually transition between the high-reflectivity mirror layer and the low-reflectivity surface, reducing thermal shocks and stabilizing performance without requiring direct complex isolation structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances radiation control, improves switching speeds, compensates for thermal variations, and increases production yield by ensuring consistent reflectivity and isolation, resulting in improved semiconductor device performance.
Implementation Method 1
an active region configured to generate electromagnetic radiation
Implementation Method 2
the recess presets a reflectivity for the electromagnetic radiation
Implementation Method 3
a dielectric layer is arranged in the recess
Implementation Method 4
If the semiconductor chip is a laser diode, the generated radiation is amplified in the resonator to laser radiation
Data Source
AI summary
The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.