Semiconductor Chip Recess Surface for Direct Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor packaging, the challenge lies in minimizing void defects and improving yield while reducing burrs on bonding surfaces during direct bonding processes, which are common issues in the integration of multiple semiconductor chips without adhesive films or connection bumps.
Innovation Solution
The implementation of a semiconductor package design that includes a recess surface on the semiconductor chip, formed by a lower insulating layer and a substrate, which allows for direct bonding without protruding burrs and minimizes void defects by providing a planar surface for stable bonding and protecting internal circuit layers during the wafer dicing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If direct bonding technology is used to integrate semiconductor chips without adhesive films or connection bumps, then miniaturization and integration density are improved, but burrs protrude onto bonding surfaces causing void defects and reducing yield
Solution Approach 1:
The recess surface is formed on the semiconductor chip before the direct bonding process. This preliminary structural preparation creates a bonding surface that accommodates burrs generated during wafer dicing, preventing them from protruding onto the actual bonding interface. The recess acts as a buffer zone that captures debris before it can interfere with the bonding between the semiconductor chip and base structure.
Solution Approach 2:
The recess surface serves as an intermediary structure between the burrs generated during dicing and the bonding surface. Instead of allowing burrs to directly contaminate the bonding interface, the recess provides a transitional zone that isolates the harmful debris from the critical bonding area, thereby maintaining bonding surface quality while enabling direct bonding technology.
2Productivity
If wafer dicing is performed to separate semiconductor chips, then chip production is enabled, but burrs are generated on chip surfaces that affect bonding quality
Solution Approach 1:
Instead of attempting to completely eliminate burrs generated during wafer dicing, the invention accepts their presence and provides a dedicated recess surface for them to reside. This converts the harmful effect of burrs from bonding surface contaminants into contained features within the recess, transforming a production defect into an acceptable structural characteristic that does not interfere with bonding.
Solution Approach 2:
The recess surface extracts the burrs from the bonding surface area by providing a separate containment zone. Burrs are effectively removed from the critical bonding interface and relocated to the recess region, separating the harmful elements from the functional bonding area and enabling clean direct bonding despite the presence of dicing-generated debris.
3Reliability
If adhesive films or connection bumps are used for chip bonding, then bonding reliability is improved, but device complexity and miniaturization are compromised
Solution Approach 1:
The invention extracts and removes the adhesive film and connection bump components from the bonding structure by implementing direct bonding. The recess surface compensates for the absence of these traditional bonding elements by providing a burr-containing structure that enables reliable direct contact bonding, thereby simplifying the overall device while maintaining bonding reliability.
Data Source
AI summary
A semiconductor package is provided. The semiconductor package includes, a base structure including a body, an upper pad on the body, and an upper insulating layer on a side surface of the upper pad, the base structure having a planar upper surface provided by the upper insulating layer and the upper pad; and a semiconductor chip on the planar upper surface of the base structure, and including a substrate, a wiring structure below the substrate, a low dielectric layer on a side surface of the wiring structure, a lower connection pad below the wiring structure, and a lower insulating layer on a side surface of the lower connection pad, the semiconductor chip having a planar lower surface provided by the lower insulating layer and the lower connection pad, a side surface provided by the lower insulating layer and the substrate, and a recess surface extending from one end of the side surface to one end of the planar lower surface, wherein the low dielectric layer is spaced apart from the recess surface of the semiconductor chip by the lower insulating layer.