Semiconductor Chip Reflector Cavity for Higher Light Output
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Solution Overview
Problem
Current radiation-emitting semiconductor chips, such as LEDs, face limitations in light output due to insufficient reflectivity, which can be attributed to the use of dielectric materials with higher refractive indices, limiting their ability to achieve high total reflection and increased light emission.
Innovation Solution
The introduction of a semiconductor chip design that incorporates a reflector with a gas-filled cavity having a refractive index not exceeding 1.1, sealed with an impermeable material, which enhances reflectivity by creating an abrupt change in refractive index at the interface, thereby increasing light output. This design replaces traditional dielectric materials with gases like argon or xenon, improving reflectivity and light emission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If dielectric materials with higher refractive indices are used for the reflector, then the structural integrity and mechanical protection are improved, but the reflectivity and light output are reduced
Solution Approach 1:
The patent changes the refractive index parameter of the reflector material from traditional dielectric materials (higher refractive index) to gas-filled cavities (refractive index ≤1.1). This parameter change creates an abrupt refractive index difference at the semiconductor-gas interface, significantly improving reflectivity and light output while the gas cavity is sealed to maintain structural integrity
Solution Approach 2:
The reflector is designed as a composite structure combining a sealed cavity filled with low-refractive-index gas material. This composite approach allows the gas to provide optical benefits (high reflectivity) while the sealing structure provides mechanical protection, resolving the contradiction between structural integrity and light output
2Stability of the object's composition
If dielectric materials with higher refractive indices are used for the reflector, then the material stability is improved, but the reflectivity and emission efficiency are reduced
Solution Approach 1:
The patent changes the optical parameter (refractive index) of the reflector from traditional dielectric materials to gas-filled cavities with refractive index ≤1.1. This creates an abrupt refractive index difference that significantly improves reflectivity and emission efficiency, while the gas is sealed to maintain compositional stability
Solution Approach 2:
The sealed gas cavity acts as an intermediary between the semiconductor body and the external environment. It provides the desired optical properties (low refractive index for high reflectivity) while the sealing structure mediates between the gas and外部环境, ensuring material stability and protection
3Ease of manufacture
If traditional dielectric materials are used for the reflector, then the manufacturing simplicity is maintained, but the light output and reflectivity are insufficient
Solution Approach 1:
The patent changes the material parameter from solid dielectric to gas-filled cavity structure. This can be integrated into existing semiconductor manufacturing processes by forming cavities and filling them with gas, achieving high reflectivity without significantly complicating the manufacturing flow
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The described semiconductor chip design significantly increases light output by achieving high reflectivity for radiation striking the interface at shallow angles, leading to enhanced emission efficiency and protection of the reflector from chemical and mechanical damage.
Implementation Method 1
The direct contact of the semiconductor body, which has a refractive index of at least 2, for example, with the material with which the at least one cavity is filled and the property that the refractive index of the material is no greater than 1.1, results in an abrupt change in the refractive index at the interface between the semiconductor body and the cavity. This abrupt change advantageously provides a particularly high reflectivity for emitted radiation that strikes the interface at a shallow angle.
Implementation Method 2
The at least one cavity is arranged between the reflector and the semiconductor body... filled with a material having a refractive index not exceeding 1.1
Data Source
AI summary
A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.