High-Frequency Amplifier Structure With Resonator Above Chip
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Solution Overview
Problem
High frequency devices experience oscillation due to leakage of amplified signals, which can be exacerbated by the reflection of signals from reference potential layers, leading to unstable amplifier operation.
Innovation Solution
Incorporating a resonator between the semiconductor chip and the reference potential layer, designed to resonate at the operating frequency of the amplifier, minimizes impedance and absorbs or reflects leaked signals, thereby suppressing oscillation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a reference potential layer is provided above the semiconductor chip to provide a reference potential, then the amplifier can operate with a stable reference potential, but high frequency signals may leak and reflect from the reference potential layer causing oscillation
Solution Approach 1:
A resonator is introduced as an intermediary component between the semiconductor chip and the first reference potential layer. The resonator has minimal impedance at the resonance frequency, allowing it to absorb or reflect leaked high frequency signals before they can reflect from the reference potential layer and cause oscillation. This mediator prevents the harmful interaction between the amplifier signals and the reference potential layer.
Solution Approach 2:
The resonator is designed to have minimal impedance at the specific resonance frequency that matches the amplifier's operating frequency. By converting the leaked high frequency signals (which would normally cause harmful oscillation) into resonant energy that is absorbed or constructively reflected by the resonator, the harmful effect is transformed into a beneficial signal absorption mechanism that stabilizes amplifier operation.
2Reliability
If the resonator is designed with minimal impedance at the resonance frequency to absorb leaked signals, then oscillation is suppressed, but the device structure becomes more complex
Solution Approach 1:
The resonator structure serves multiple functions simultaneously: it provides a reference potential path, absorbs leaked high frequency signals through its minimal impedance at resonance frequency, and stabilizes amplifier operation. By combining these functions into a single component, the overall device complexity is minimized while achieving reliable oscillation suppression.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The resonator effectively attenuates or reflects high frequency signals that would otherwise cause oscillation, stabilizing the amplifier operation and maintaining consistent performance regardless of installation environment.
Implementation Method 1
a resonator provided between the semiconductor chip and the first reference potential layer in the upper direction perpendicular to the front surface of the semiconductor substrate, wherein a resonance frequency of the resonator is included in an operating frequency band of the amplifier, and an impedance of the resonator becomes minimal at the resonance frequency
Data Source
AI summary
A high frequency device includes a semiconductor chip including a semiconductor substrate, and an amplifier provided on a front surface of the semiconductor substrate and amplifying a high frequency signal, a first reference potential layer provided above the semiconductor chip in an upper direction perpendicular to the front surface of the semiconductor substrate, and provided so as to overlap with the semiconductor chip in a plan view from above, and to which a reference potential is supplied, and a resonator provided between the semiconductor chip and the first reference potential layer in the upper direction perpendicular to the front surface of the semiconductor substrate, wherein a resonance frequency of the resonator is included in an operating frequency band of the amplifier, and an impedance of the resonator becomes minimal at the resonance frequency.