Semiconductor Chip Scattering Detection for Laser Dicing Reliability

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Solution Overview

Problem

Laser scattering during the dicing process of semiconductor wafers can cause damage to circuit elements, leading to deteriorated operating characteristics of semiconductor chips, as existing technologies lack effective methods to measure and mitigate this issue.

Innovation Solution

Incorporating scattering detection patterns with multiple circuit cells in the peripheral regions of semiconductor chips that generate leakage current based on scattered laser beams or heat, allowing for the measurement and storage of laser scattering data to assess and prevent quality degradation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If laser dicing is used to cut semiconductor wafers, then cutting efficiency is improved, but laser scattering causes damage to circuit elements and deteriorates operating characteristics

Engineering Contradiction:
Improvecutting efficiencyVSAvoidoperating characteristics
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies preliminary action by incorporating scattering detection patterns into the semiconductor wafer before the dicing process. These patterns include circuit cells positioned in the scribe lane region that will detect laser scattering during cutting. By having the detection mechanism pre-installed, the system can identify laser scattering issues during the actual dicing process and adjust parameters to prevent circuit element damage, thus maintaining both cutting efficiency and reliability.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements feedback by using the scattering detection patterns to monitor laser scattering in real-time during the dicing process. The circuit cells generate leakage current proportional to the amount of laser scattering, providing continuous feedback about the laser beam quality. This feedback allows the dicing system to adjust laser parameters dynamically, preventing excessive scattering that would damage circuit elements while maintaining efficient cutting.

Inventive Principle:
Principle #23Feedback

2Measurement precision

If scattering detection patterns are added to measure laser scattering, then measurement capability is improved, but device complexity increases

Engineering Contradiction:
Improvelaser scattering measurementVSAvoidchip structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies universality by designing the scattering detection patterns to serve multiple functions: they act as both test structures for laser scattering measurement and as part of the overall chip structure. The circuit cells can be integrated into the peripheral regions or scribe lanes, serving dual purposes of quality assessment and structural completeness, thereby reducing the need for separate dedicated measurement components.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent implements self-service by enabling the semiconductor wafer itself to perform the measurement function through the integrated scattering detection patterns. The circuit cells within these patterns generate leakage current that directly indicates the level of laser scattering, allowing the wafer to self-diagnose the quality of the dicing process without requiring external measurement equipment, thus simplifying the overall system complexity.

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables the confirmation of laser scattering levels during the dicing process, facilitating the installation of a warning control system and preventing quality degradation by measuring the scattering data, which does not affect the performance of the semiconductor chips since the detection patterns are in non-circuit areas.

Implementation Method 1

Laser scattering may occur during the process of cutting the semiconductor wafer using the laser. Laser scattering may cause damage to circuit elements inside a semiconductor chip.

Methodology Applied
Scientific EffectLaser scattering: Scattering

Implementation Method 2

at least one scattering detection pattern in the peripheral region, the at least one scattering detection pattern having a plurality of circuit cells that generate leakage current based on a scattered beam or heat of a laser

Methodology Applied
Scientific EffectThermal effect: Heating

Data Source

PatentUS20250022760A1Semiconductor chip, semiconductor device including semiconductor chips, and method of inspecting the semiconductor device
Publication Date: 2025.01.16 SAMSUNG ELECTRONICS CO LTD
  • US20250022760A1 patent drawing
  • US20250022760A1 patent drawing
  • US20250022760A1 patent drawing

AI summary

A semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite to the first surface. The semiconductor substrate includes a circuit pattern region and a peripheral region surrounding the circuit pattern region, an activation layer on the second surface of the semiconductor substrate and having a plurality of circuit patterns in the circuit pattern region, and at least one scattering detection pattern in the peripheral region and having a plurality of circuit cells that generate leakage current based on a scattered beam or heat of a laser.