Semiconductor Chip Separation Grooves to Prevent Etching Damage
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Solution Overview
Problem
Existing semiconductor device manufacturing methods face challenges in avoiding damage to active layers during etching processes, particularly for small-sized chips where side surface damage can significantly lower light-emitting efficiency.
Innovation Solution
The method involves preparing a semiconductor substrate with a first semiconductor part that is divided into base semiconductor parts before forming a compound semiconductor part, thereby avoiding etching damage and improving the quality of the semiconductor device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If PEC etching is performed on an element formation layer to separate semiconductor devices, then device separation is achieved, but side surface damage occurs on small-sized chips reducing light-emitting efficiency
Solution Approach 1:
The patent applies preliminary action by forming separation grooves between adjacent light-emitting elements before performing PEC etching. These pre-formed grooves serve as protective barriers that prevent the etching solution from directly contacting and damaging the side surfaces of small-sized chips, thereby eliminating side surface damage while maintaining effective device separation.
2Productivity
If element formation layer is etched for device separation, then devices are separated, but active layer damage occurs lowering light-emitting efficiency
Solution Approach 1:
The patent forms separation grooves between adjacent light-emitting elements before PEC etching. These grooves act as protective barriers that prevent the etching solution from contacting the active layers, thereby eliminating active layer damage while maintaining effective device separation.
Solution Approach 2:
The separation grooves serve as an intermediary structure between adjacent light-emitting elements. This intermediate feature protects the active layers from direct exposure to the PEC etching solution, preventing damage while still allowing effective separation of devices.
3Productivity
If small-sized chips are processed with PEC etching, then device density increases, but side surface damage significantly reduces light-emitting efficiency
Solution Approach 1:
The patent forms separation grooves between adjacent light-emitting elements before PEC etching. This preliminary protective structure is particularly effective for small-sized chips where the ratio of side surface area to active area is high, preventing etching solution contact and maintaining light-emitting efficiency while enabling high device density.
Data Source
AI summary
To prepare a semiconductor substrate in which a first semiconductor part is formed above a main substrate, divide the first semiconductor part into a plurality of base semiconductor parts by forming a plurality of trenches in the first semiconductor part, and form a compound semiconductor part above at least one of the plurality of base semiconductor parts.