Chip Backside Heat-Dissipation Structure to Block Sputter Residues
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Solution Overview
Problem
During the formation of a heat-dissipation layer on a chip backside, metal residues accumulate in the gap between the active surface and the carrier, leading to contamination and reduced quality and yield of the chips.
Innovation Solution
A chip structure with a half groove surrounding the active surface is adhered to a carrier, creating a sheltering space that prevents spattering target atoms from accumulating and forming metal residues, thereby protecting the chip from contamination and damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a heat-dissipation layer is formed on the back surface of chips through sputtering process, then heat dissipation performance is improved, but metal residues accumulate in the gap between the active surface and the tape causing contamination and reduced yield
Solution Approach 1:
A protective film is formed on the active surface of the chip before the sputtering process. This preliminary protective layer prevents spattering target atoms from reaching and contaminating the active surface during heat-dissipation layer formation, thereby eliminating metal residue accumulation while maintaining the heat dissipation function
Solution Approach 2:
The protective film acts as an intermediary barrier between the sputtering environment and the chip's active surface. It allows the heat-dissipation layer to be formed on the back surface while blocking harmful spattered atoms from contaminating the active surface, thus resolving the contradiction between heat dissipation and contamination prevention
2Ease of manufacture
If the active surface is exposed during sputtering process, then heat-dissipation layer can be formed on back surface, but the active surface is contaminated by spattering target atoms
Solution Approach 1:
The protective film is applied to the active surface before the sputtering process begins. This preliminary protective measure enables the sputtering process to proceed without causing contamination, thereby maintaining both manufacturing ease and chip quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The half groove effectively prevents metal residues from forming, maintaining chip quality and yield by shielding the active surface during the sputtering process.
Implementation Method 1
A heat-dissipation layer 12 is formed on a back surface 11b of each of the chips 11 through sputtering process
Data Source
Figure 1~2
Figure 3~4A
Figure 4B~4C
AI summary
In a method of manufacturing chip structures, an active surface of a chip is adhered to a carrier and a heat-dissipation layer is formed on a back surface of the chip. Because of a half groove surrounding the active surface of the chip, metal residues will not accumulate in a gap between the active surface and the carrier to contaminate the chip during formation of the heat-dissipation layer.