Chip Stack Spacer Structure for Semiconductor Heat Dissipation

Solution Overview

Problem

Existing semiconductor devices face challenges in processing spacers made of silicon, which are difficult to shape into complex forms, leading to increased costs and reduced thermal conductivity, affecting heat dissipation and reliability.

Innovation Solution

Using materials with higher thermal conductivity, such as metal or ceramic, to form a single spacer that surrounds the semiconductor chip, allowing for easier processing and improved heat dissipation while reducing thermal resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If silicon is used to form spacers, then the spacers can be formed with standard materials, but the spacers are difficult to shape into complex forms and have low thermal conductivity

Engineering Contradiction:

Improveease of processingVSAvoidthermal conductivity

Core Design Contradiction:

Ease of manufactureVSReliability

Solution Approach 1:

The patent changes the material parameter from silicon to metal or ceramic, which fundamentally alters both the processability and thermal conductivity characteristics. This material substitution enables complex shaping while simultaneously improving heat dissipation performance.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The spacer is formed as a composite structure containing metal particles or ceramic particles dispersed in a resin matrix. This composite approach combines the ease of processing from the resin with the high thermal conductivity of metal or ceramic particles, achieving both objectives simultaneously.

Inventive Principle:

Principle #40Composite materials

2Reliability

If silicon is used to form spacers, then the material is readily available, but the thermal conductivity is insufficient for effective heat dissipation

Engineering Contradiction:

Improveheat dissipationVSAvoidprocessing difficulty

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter from silicon to metal or ceramic, which fundamentally alters both the processability and thermal conductivity characteristics. This material substitution enables complex shaping while simultaneously improving heat dissipation performance.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The spacer is formed as a composite structure containing metal particles or ceramic particles dispersed in a resin matrix. This composite approach combines the ease of processing from the resin with the high thermal conductivity of metal or ceramic particles, achieving both objectives simultaneously.

Inventive Principle:

Principle #40Composite materials

3Adaptability or versatility

If complex shapes are required for spacers, then the device functionality is improved, but the processing difficulty and cost increase

Engineering Contradiction:

Improveshape complexityVSAvoidprocessing ease

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter from silicon to metal or ceramic, which fundamentally alters both the processability and thermal conductivity characteristics. This material substitution enables complex shaping while simultaneously improving heat dissipation performance.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the reliability and heat dissipation properties of the semiconductor device by using materials that are easier to process and have higher thermal conductivity than silicon, thereby reducing costs and improving overall device performance.

Implementation Method 1

the spacer containing a material higher in thermal conductivity than silicon

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20260026413A1Semiconductor device

Publication Date: 2026.01.22 KIOXIA CORP

AI summary

A semiconductor device includes: a wiring board having a surface; a chip stack disposed above the surface and including a first semiconductor chip; a second semiconductor chip disposed between the surface and the chip stack; a spacer disposed between the surface and the first semiconductor chip, the spacer surrounding the second semiconductor chip along the surface, and the spacer containing a material higher in thermal conductivity than silicon; and a sealing insulation layer covering the chip stack.