Chip Stack Spacer Structure for Lower Thermal Resistance
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Solution Overview
Problem
Existing semiconductor devices face challenges in processing spacers made of silicon, which are difficult to form into complex shapes, leading to increased costs and reduced thermal conductivity, thereby affecting the heat dissipation and reliability of the device.
Innovation Solution
Utilizing materials with higher thermal conductivity, such as metal or ceramic, to form spacers that surround semiconductor chips, allowing for easier processing and reducing thermal resistance, and incorporating features like depressions to facilitate resin flow and electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If silicon is used to form spacers, then electrical insulation is provided, but thermal conductivity is insufficient and processing complex shapes is difficult
Solution Approach 1:
The patent changes the material parameter of the spacer from silicon to a composite material containing high thermal conductivity particles (such as aluminum nitride or silicon carbide) dispersed in a resin matrix. This parameter change increases thermal conductivity while maintaining electrical insulation properties and enabling easier processing of complex shapes including depressions.
Solution Approach 2:
The patent employs a composite material structure where high thermal conductivity particles are embedded in a resin matrix to create a spacer that combines thermal conduction, electrical insulation, and ease of molding. This composite approach resolves the contradiction between thermal performance and manufacturability.
2Reliability
If silicon spacers are used, then electrical insulation is maintained, but thermal resistance increases affecting device reliability
Solution Approach 1:
The patent modifies the thermal parameter of the spacer material by incorporating high thermal conductivity particles with thermal conductivity of 170 W/mK or higher (such as aluminum nitride or silicon carbide) into the resin matrix, thereby reducing thermal resistance and improving heat dissipation while maintaining electrical insulation.
3Adaptability or versatility
If complex spacer shapes are required for resin flow and electrical connections, then functionality is improved, but manufacturing difficulty and cost increase with silicon
Solution Approach 1:
The patent uses a composite resin-based spacer material that can be easily molded into complex shapes including depressions for resin flow and electrical connections. The resin matrix allows for versatile shaping while the high thermal conductivity particles maintain thermal performance, avoiding the manufacturing difficulties associated with silicon.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances heat dissipation properties and improves the reliability of the semiconductor device by reducing thermal resistance and preventing cost increases due to simplified spacer processing.
Implementation Method 1
the spacer containing a material higher in thermal conductivity than silicon
Data Source
AI summary
A semiconductor device includes: a wiring board having a surface; a chip stack disposed above the surface and including a first semiconductor chip; a second semiconductor chip disposed between the surface and the chip stack; a spacer disposed between the surface and the first semiconductor chip, the spacer surrounding the second semiconductor chip along the surface, and the spacer containing a material higher in thermal conductivity than silicon; and a sealing insulation layer covering the chip stack.