Chip Stacking Process Recovery to Prevent Microbump Oxidation

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Solution Overview

Problem

In semiconductor manufacturing, the oxidation of microbumps during chip stacking leads to connection defects due to continuous heating when the stacking apparatus is stopped, resulting in excessive oxide film formation and impaired electrical connections between chips.

Innovation Solution

A semiconductor manufacturing method and apparatus that includes a control device with condition determination, evacuation, and resuming units to temporarily evacuate stacked semiconductor chips when the stacking process is stopped, preventing further heating and oxidation, and allowing for resumed processing without discarding the chips.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If semiconductor chips are continuously heated on the stage when the stacking apparatus is stopped, then the chips remain in position for resuming processing, but the solder of microbumps is excessively oxidized forming oxide films that cause connection defects

Engineering Contradiction:
Improveconnection reliabilityVSAvoidoxidation of microbumps
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies inert atmosphere by introducing a nitrogen gas flow around the semiconductor chips on the stage. This nitrogen atmosphere prevents oxidation of the microbump solder by displacing oxygen, thereby maintaining connection reliability during apparatus stoppages while allowing the heating to continue for positional stability.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Adaptability or versatility

If the stacking apparatus is stopped during the stacking process, then processing can be resumed later, but the continuous heating causes excessive oxide film formation on microbumps

Engineering Contradiction:
Improveprocess interruption and resumptionVSAvoidmicrobump oxidation control
Core Design Contradiction:
Adaptability or versatilityVSManufacturing precision

Solution Approach 1:

The system maintains an inert nitrogen atmosphere during apparatus stoppages, allowing flexible interruption and resumption of the stacking process without compromising microbump quality. The nitrogen flow continues during stops to prevent oxidation while the heating maintains chip positions for accurate resumption.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Solution Approach 2:

Nitrogen gas serves as an intermediary substance between the oxygen-containing environment and the microbump solder. This intermediary prevents direct contact between oxygen and the solder surface, enabling process interruptions without oxidation damage.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If heating is applied to maintain chip positions during stops, then alignment is preserved for resuming stacking, but solder oxidation accelerates forming connection defects

Engineering Contradiction:
Improvechip alignment precisionVSAvoidmicrobump connection integrity
Core Design Contradiction:
Measurement precisionVSReliability

Solution Approach 1:

The patent combines thermal heating with inert nitrogen atmosphere protection. The heating maintains chip alignment precision on the stage, while the concurrent nitrogen flow prevents oxidation of the microbump solder, thereby preserving both alignment and connection integrity during stoppages.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method prevents the oxidation of microbumps, ensuring reliable electrical connections between semiconductor chips by maintaining the chips in a controlled environment, thereby reducing connection defects and enhancing the manufacturing process efficiency.

Implementation Method 1

the solder of the microbump on the semiconductor chip continues to be oxidized, and an oxide film is excessively formed

Methodology Applied
Scientific EffectOxidation: Oxidation

Data Source

PatentUS11749667B2Semiconductor manufacturing apparatus
Publication Date: 2023.09.05 KIOXIA CORP
  • US11749667B2 patent drawing
  • US11749667B2 patent drawing
  • US11749667B2 patent drawing

AI summary

A semiconductor manufacturing method of mounting a semiconductor chip or a stacked body of semiconductor chips on a support substrate placed on a stage, determines whether a predetermined condition is satisfied during a mounting processing of the semiconductor chip or the stacked body, evacuates, together with the support substrate, the semiconductor chip or the stacked body that has mounted on the support substrate before the determination when it is determined that the predetermined condition is satisfied, determines whether to resume the mounting processing of the semiconductor chip or the stacked body after the evacuation; and returns the evacuated semiconductor chip or the evacuated stacked body to a position before the evacuation and continuing the mounting processing when it is determined that the mounting processing is resumed.