Chip Interconnect Thermal Layer and Heat Pipe Layout
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Solution Overview
Problem
Integrated chip structures face challenges with localized high temperatures and temperature variations due to poor thermal conductivity, leading to performance issues and reliability concerns, particularly as conductive interconnects generate heat through Joule heating and are surrounded by low thermal conductivity dielectric materials.
Innovation Solution
Incorporating a high thermal conductivity layer and heat pipes within the dielectric structure to facilitate both lateral and vertical heat diffusion, enhancing the overall thermal dissipation by using materials like diamond, silicon carbide, and graphene to efficiently transfer heat away from potential high-temperature areas.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional dielectric materials are used to surround conductive interconnects, then the dielectric structure provides electrical insulation, but the thermal conductivity is poor leading to localized high temperatures
Solution Approach 1:
The patent employs composite material structures where high thermal conductivity layers (such as diamond, cubic silicon carbide, or metallic materials) are integrated within the dielectric structure surrounding conductive interconnects. These composite structures combine the electrical insulation properties of dielectric materials with the superior thermal conductivity of specialized materials, enabling simultaneous electrical isolation and effective heat dissipation to prevent localized high temperatures and improve chip reliability.
Solution Approach 2:
The patent applies local quality by placing high thermal conductivity layers specifically in regions where heat generation is most intense, such as around conductive interconnects and active device areas. This localized approach targets thermal management resources to where they are most needed, rather than uniformly treating the entire chip structure, thereby efficiently addressing localized high temperature problems while maintaining overall structural integrity.
2Temperature
If high thermal conductivity layers are added to the dielectric structure, then thermal dissipation is enhanced, but the device complexity increases
Solution Approach 1:
The high thermal conductivity layers are designed to serve multiple functions simultaneously: they act as thermal conduction paths for heat dissipation, provide structural support within the dielectric layers, and in some implementations, serve as etch stop layers or adhesion layers during manufacturing processes. This multi-functionality reduces the need for separate dedicated components, thereby enhancing thermal dissipation while limiting increases in overall device complexity.
Solution Approach 2:
The patent implements nested structures where high thermal conductivity layers are embedded within existing dielectric layers and interconnect structures. The thermal management layers are integrated into the conventional chip fabrication sequence, with thermal conduction paths nested within or between standard dielectric and conductor layers. This nesting approach allows thermal management functionality to be added without fundamentally restructuring the entire device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces localized high temperatures and temperature variations, improving integrated chip performance and reliability by mitigating timing uncertainties and mechanical stresses, while maintaining a compact design.
Implementation Method 1
a laterally extending high thermal conductivity layer configured to enhance thermal diffusion along lateral directions
Implementation Method 2
a heat pipe vertically extending through the dielectric structure
Implementation Method 3
the conductive interconnects are configured to selectively provide power to the devices, so as to cause them to perform a function
Data Source
AI summary
The present disclosure relates to an integrated chip. The integrated chip includes a plurality of conductive interconnects arranged within a dielectric structure having a plurality of inter-level dielectric (ILD) layers stacked onto one another. A heat pipe vertically extends through the plurality of ILD layers. A high thermal conductivity layer is sandwiched between neighboring ones of the plurality of ILD layers. The high thermal conductivity layer laterally extends from over one or more of the plurality of conductive interconnects to the heat pipe.