Chip Transition Structure for TIM-Free Heat Dissipation Expansion
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Solution Overview
Problem
Current methods for expanding chip heat dissipation areas are limited in effectively managing thermal stress and efficiently dissipating heat from semiconductor devices, often relying on thermal interface materials (TIMs) that can introduce stress and reduce heat transfer efficiency.
Innovation Solution
The semiconductor device incorporates a transition structure with a higher ratio of thermal conductive material than substrate material on its second surface, allowing direct joining with a thermal conductor without TIMs, enhancing heat transfer and relaxation of thermal stress, and utilizing a heatsink with a larger surface area for improved heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal interface materials (TIMs) are used between chip substrate and thermal conductor, then heat transfer is enabled, but thermal stress increases and heat transfer efficiency decreases
Solution Approach 1:
The patent removes the thermal interface material (TIM) layer from between the chip substrate and thermal conductor. By directly joining the chip substrate to the thermal conductor, it extracts the harmful intermediate layer that caused thermal stress and reduced heat transfer efficiency, achieving both stress reduction and improved thermal performance
Solution Approach 2:
The patent merges the chip substrate and thermal conductor into a directly joined structure without intermediate materials. This consolidation eliminates the TIM layer and creates a unified thermal path, improving heat transfer efficiency while reducing thermal stress accumulation at interfaces
2Area of stationary object
If traditional heat dissipation structures are used, then device complexity is low, but heat dissipation area is insufficient
Solution Approach 1:
The patent extends the heat dissipation structure from a single-plane heatsink to a three-dimensional configuration using vertical fins and extended surfaces. This dimensional transformation significantly increases the heat dissipation area without proportionally increasing device complexity, as the extended structures utilize vertical space rather than horizontal footprint
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively relaxes thermal stress between the chip substrate and thermal conductor, enhances heat transfer efficiency, and increases the heat dissipation area, allowing for more efficient heat dissipation compared to traditional methods using TIMs.
Implementation Method 1
a thermal conductor 130, which is joined to the second surface of the semiconductor chip 120 and has a higher thermal conductivity than the substrate material
Implementation Method 2
a heatsink 150...with a larger surface area for improved heat dissipation
Implementation Method 3
a heatsink 150...with a larger surface area for improved heat dissipation
Implementation Method 4
transition structure with a higher ratio of thermal conductive material than substrate material on its second surface, allowing direct joining with a thermal conductor...effectively relaxes thermal stress
Data Source
AI summary
Provided is a semiconductor device, comprising: a semiconductor chip where a circuit is formed on a side of a first surface of a chip substrate and a transition structure is integrated on a side of a second surface which is opposite to the first surface of the chip substrate, wherein the transition structure is obtained by causing a ratio of a substrate material of a chip substrate body to be less than a ratio of the substrate material on the side of the first surface and adding a thermal conductive material which has a higher thermal conductivity than the substrate material; and a thermal conductor which is joined to the second surface of the semiconductor chip and has a higher thermal conductivity than the substrate material.