Chiplet Sidewall Interconnect Cooling for 3D Stack Hotspots

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Solution Overview

Problem

Existing thermal management techniques for stacked semiconductor device structures, such as 3DICs, are inadequate in effectively cooling the center of the stack due to insufficient heat dissipation from lower and middle layers, leading to thermal gradients and mechanical stress from thermal expansion.

Innovation Solution

A sidewall interconnect is positioned on the sidewall of the stacked semiconductor device structure, rotated 90 degrees, and connected to a device substrate, with a heat spreader engaged to the structure through deformable pillars and joints, providing a direct thermal pathway for heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If conventional thermal management techniques are used for stacked semiconductor device structures, then the structure can be maintained, but heat dissipation from lower and middle layers is insufficient, leading to thermal gradients and mechanical stress

Engineering Contradiction:

Improveheat dissipationVSAvoidthermal gradient and mechanical stress

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The patent transitions from conventional top-down thermal management to a sidewall-based thermal management approach. The heat spreader is attached to the sidewall of the stacked semiconductor device structure, creating a lateral thermal conduction pathway that directly addresses heat generation sources in lower and middle layers, thereby eliminating thermal gradients and mechanical stress caused by insufficient heat dissipation.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Temperature

If a heat spreader is attached to the sidewall of the stacked semiconductor device structure, then heat dissipation is improved, but the structural stability may be affected

Engineering Contradiction:

Improveheat dissipationVSAvoidstructural stability

Core Design Contradiction:

TemperatureVSStability of the object's composition

Solution Approach 1:

The patent incorporates a deformable joint between the heat spreader and the sidewall of the stacked semiconductor device structure. This deformable joint acts as a cushioning element that can accommodate thermal expansion and contraction, thereby maintaining structural stability while still enabling effective heat dissipation from the sidewall.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Adaptability or versatility

If multiple materials with different thermal characteristics are used in the stacked structure, then functional requirements are met, but dimensional changes and performance variations occur under temperature changes

Engineering Contradiction:

Improvefunctional requirementsVSAvoiddimensional stability

Core Design Contradiction:

Adaptability or versatilityVSStability of the object's composition

Solution Approach 1:

The patent utilizes the thermal expansion characteristics of different materials by incorporating a deformable joint in the heat spreader attachment. This joint is designed to accommodate the dimensional changes that occur when multiple materials with different thermal expansion coefficients are subjected to temperature variations, thereby maintaining the overall structural integrity and performance stability.

Inventive Principle:

Principle #37Thermal expansion

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively cools the center of the stacked semiconductor device structure by dissipating heat generated in lower and middle layers, mitigating thermal gradients and mechanical stress, ensuring stable electrical connections.

Implementation Method 1

a heat spreader engaged to the structure through deformable pillars and joints, providing a direct thermal pathway for heat dissipation

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

Different thermal characteristics of multiple structures and their different materials can result in dimensional changes and performance variations when subjected to temperature changes

Methodology Applied

Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS20250246499A1Chiplet integration structure for thermal management

Publication Date: 2025.07.31 INTERNATIONAL BUSINESS MACHINE CORPORATION

AI summary

An electrical device that includes a stacked semiconductor device structure connected to a device substrate through a sidewall interconnect. The sidewall interconnect of the stacked semiconductor device structure is in contact with metal lines extending from a sidewall of the stacked semiconductor device structure to semiconductor devices positioned within an interior the stacked semiconductor device structure. The electrical device includes a heat spreader connected to the stacked semiconductor structure.