Composite Chiplet TDV Guard Ring for Moisture Corrosion Resistance
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Solution Overview
Problem
Current IC integration techniques face limitations such as high cost, low insertion efficiency, and increased z-height due to latency and energy efficiency issues in interconnects, particularly in multi-chip packages and wafer-level stacking, which restrict the density and reliability of interconnects between IC chips.
Innovation Solution
The implementation of a composite chiplet structure with hybrid direct interconnects and annular guard ring structures to mitigate corrosion and enhance interconnect density, using conductive materials like copper or tin for through-connections and moisture-resistant materials for the guard rings, which surround interconnects to prevent moisture absorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If through-dielectric vias (TDVs) are used to increase interconnect density between chiplets, then interconnect density and electrical connectivity are improved, but the risk of corrosion increases due to moisture absorption in the dielectric material
Solution Approach 1:
A guard ring structure is introduced as an intermediary element between the TDV and the moisture source. The guard ring acts as a barrier that intercepts and redirects moisture away from the TDV, preventing direct contact between moisture and the conductive via material, thus eliminating corrosion while preserving high interconnect density
Solution Approach 2:
The patent converts the harmful effect of moisture absorption by dielectric material into a beneficial protective mechanism. By intentionally allowing the dielectric to absorb moisture (which would normally harm the TDV), the patent creates a moisture gradient that draws moisture away from the TDV toward the guard ring, which then channels it to safe discharge paths
2Adaptability or versatility
If multiple IC chips are integrated into a multi-chip package (MCP) to combine heterogeneous silicon processes, then design flexibility and functionality are improved, but latency and energy efficiency limitations increase due to package routing
Solution Approach 1:
The patent transitions from two-dimensional package routing to three-dimensional die stacking with vertical through-dielectric vias. This dimensional change shortens interconnect paths by routing signals vertically through thin dielectric layers rather than laterally through thick package substrates, reducing both latency and energy consumption while maintaining design flexibility
Solution Approach 2:
The patent segments the interconnect path into multiple short vertical segments through stacked die with TDVs, replacing a single long lateral routing path. This segmentation reduces the total interconnect length and resistance, improving energy efficiency while allowing independent optimization of each die for heterogeneous processes
3Quantity of substance
If wafer-level stacking is used to support many electrical connections, then connection density is improved, but manufacturing cost and complexity increase due to requiring substantially the same size dies
Solution Approach 1:
The patent applies local quality by implementing TDVs only in specific regions where high-density interconnect is needed, rather than requiring uniform die sizes throughout. This allows different die to be stacked with TDVs positioned to match local interconnect requirements, enabling heterogeneous die integration while maintaining high connection density in critical areas
Solution Approach 2:
The patent changes the key parameter from die size uniformity to TDV positioning flexibility. By decoupling the requirement for matching die sizes from the stacking process and instead focusing on precise TDV alignment, the patent enables wafer-level stacking of heterogeneous dies with different footprints, reducing manufacturing complexity while preserving high connection density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the yield and cost-effectiveness of IC integration by increasing interconnect density and reliability, reducing the risk of corrosion, and enabling more efficient electrical connectivity between chiplets, thereby overcoming the limitations of existing technologies.
Implementation Method 1
a first annular structure which extends through the first insulator layer and which surrounds the first plurality of conductive vias in the first insulator layer... a first patterned layer at a first side of the first insulator layer, and a second patterned layer at a second side of the first insulator layer, wherein the second side is opposite the first side, wherein the first patterned layer and the second patterned layer each comprise a respective non-metallic material to resist an absorption of moisture by the first insulator layer
Data Source
AI summary
Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.