Chlorine-Containing Semiconductor Layer Interface Control
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Solution Overview
Problem
Current semiconductor device manufacturing processes face challenges in optimizing the characteristics of semiconductor films formed on insulating films, particularly in controlling the chlorine concentration and dangling bond density at the interface, which affects the electrical properties of the devices.
Innovation Solution
A technique involving the formation of a chlorine-containing semiconductor layer on an insulating film using a chlorosilane-based gas, followed by the deposition of a semiconductor film using a silane-based gas, with precise control of chlorine concentration between 1.0×10^20 and 1.0×10^22 atoms/cm^3, and thickness to terminate dangling bonds and enhance interface state density control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor film is formed on an insulating film using conventional methods, then the semiconductor film can be deposited, but the interface state density is high and electrical characteristics are poor
Solution Approach 1:
The semiconductor layer is divided into two distinct parts: a chlorine-containing semiconductor layer (5-30 nm thick) formed first, and then a semiconductor film formed on top. This segmentation allows the chlorine-containing layer to specifically address interface state issues while the upper layer provides the functional semiconductor properties.
Solution Approach 2:
The chlorine-containing semiconductor layer is formed in advance before the main semiconductor film deposition. This preliminary layer acts as an interface treatment that reduces dangling bonds and prepares the surface for subsequent film formation, thereby improving electrical characteristics before the main functional layer is deposited.
2Manufacturing precision
If chlorine concentration is increased to reduce interface state density, then interface quality improves, but excessive chlorine causes carrier scattering
Solution Approach 1:
The chlorine concentration is precisely controlled within the range of 1.0×10^20 to 1.0×10^22 atoms/cm³, and the layer thickness is controlled at 5-30 nm. These parameter optimizations ensure sufficient chlorine to reduce interface states while preventing excessive chlorine that would cause carrier scattering, thus balancing interface quality and electrical performance.
Solution Approach 2:
The chlorine is localized specifically in the lower portion of the semiconductor structure (the chlorine-containing semiconductor layer), while the upper semiconductor film maintains low chlorine content. This local concentration of chlorine addresses interface issues without introducing excessive chlorine into the bulk semiconductor region where it would cause carrier scattering.
3Area of stationary object
If a thick semiconductor layer is formed to ensure complete coverage, then coverage is improved, but chlorine diffusion into the film increases
Solution Approach 1:
The structure consists of a chlorine-containing semiconductor layer at the bottom (providing interface treatment and coverage) and a chlorine-poor semiconductor film on top (maintaining low chlorine concentration). This local differentiation ensures complete interface coverage while preventing excessive chlorine diffusion into the functional semiconductor region.
Solution Approach 2:
The semiconductor structure is segmented into two layers with distinct chlorine concentrations: the lower layer contains chlorine for interface treatment, while the upper layer is formed with controlled low chlorine content. This segmentation prevents chlorine from the lower layer from excessively diffusing into the upper functional film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces the interface state density, improves the electrical characteristics of semiconductor devices, and prevents excessive chlorine from causing carrier scattering, thereby enhancing device performance.
Implementation Method 1
forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of a substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate
Implementation Method 2
forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate
Data Source
AI summary
There is included (a) forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of a substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate; and (b) forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate, wherein a chlorine concentration in the chlorine-containing semiconductor layer formed in (a) is made 1.0×1020 atoms/cm3 or more and 1.0× 1022 atoms/cm3 or less.