Chromium Etch Stop Layer for Selective Copper Patterning
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Solution Overview
Problem
The existing methods for patterning metal wiring circuits using nickel as an etch stop layer are hindered by nickel's reactivity with cupric chloride etchants and the porosity of nickel layers, leading to inefficiencies and difficulties in controlling the etching process.
Innovation Solution
A layered metal structure with copper layers flanked by a chromium etch stop layer, which is resistant to cupric chloride and other etchants, allowing for selective patterning and reducing the need for thick nickel layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If nickel is used as an etch stop layer between copper layers, then the copper layers can be patterned with different masking layers, but nickel is attacked by cupric chloride etchant requiring more complex etching processes
Solution Approach 1:
The patent changes the material parameter of the etch stop layer from nickel to chromium. Chromium is resistant to cupric chloride etchant, allowing the first copper layer to be etched without attacking the etch stop layer. This eliminates the need for dual-etchant processes and simplifies the overall etching procedure while maintaining the ability to pattern both copper layers independently.
Solution Approach 2:
The patent replaces nickel with chromium as the etch stop layer. Chromium serves as a disposable protective layer that can be selectively removed after patterning the first copper layer, simplifying the process by eliminating the need for complex in-situ regeneration or protection mechanisms required with nickel.
2Reliability
If nickel layer thickness is increased to 5 microns to avoid pinholes, then pinhole emergence is prevented, but etching time and etchant quantity are significantly increased
Solution Approach 1:
The patent changes the material from nickel to chromium, which has fundamentally different etching characteristics. Chromium can be deposited as a thin, non-porous layer that provides adequate pinhole protection without requiring the 5-micron thickness needed for nickel. This dramatically reduces the thickness parameter and consequently the etching time and etchant quantity required.
Solution Approach 2:
The patent addresses the porosity issue by selecting chromium, which forms a non-porous, dense layer when deposited. This eliminates the need to increase thickness to compensate for pinholes, as the material itself provides pinhole-free protection at much thinner dimensions, thereby reducing etching time and resource consumption.
3Reliability
If ammoniacal etchant is used to pattern copper layers, then nickel layer is protected from attack, but the etching process becomes more difficult to control
Solution Approach 1:
The patent changes the etch stop layer material from nickel to chromium, which is inherently resistant to cupric chloride etchant. This eliminates the need to use ammoniacal etchants for protection, allowing the use of standard cupric chloride etching processes that are easier to control and more commonly used in the industry.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The chromium etch stop layer enables efficient patterning of copper layers with cupric chloride without attacking the intervening layer, reducing processing time and avoiding pinholes, thus improving the reliability and control of the etching process.
Implementation Method 1
an intervening layer including chromium between the first and second layers of copper which is resistant to an etchant usable to pattern the first and second layers selectively to the intervening layer
Implementation Method 2
an etchant such as cupric chloride, ferric chloride (FeCl3), a peroxysulfuric composition, or a persulfate composition may be used
Data Source
AI summary
A layered metal structure is provided in accordance with an aspect of the invention. The structure can be used, for example, to fabricate a conductive interconnect element for conductively interconnecting one or more microelectronic elements. The layered structure includes first and second metal layers each of which may include one or more of copper or aluminum, for example. An intervening layer, may include for example, chromium between the first and second metal layers, chromium being resistant to an etchant usable to pattern the first and second metal layers selectively to the intervening layer. An etchant such as cupric chloride, ferric chloride (FeCl3), a peroxysulfuric composition, or a persulfate composition may be used to pattern the first and second metal layers in such case.


