Chrysene-Based Organic Semiconductor for High-Mobility TFTs
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Solution Overview
Problem
Conventional organic thin film transistors using silicon-based materials are costly and limit the use of lightweight substrates due to high processing temperatures, and the materials used for organic TFTs have low field effect mobility and slow response speed, making them unsuitable for high-speed applications.
Innovation Solution
A chrysene-based organic compound with specific substituents is used to form a uniform semiconductor layer, enhancing mobility and allowing for a coating process, which improves the performance of organic thin film transistors by increasing field effect mobility and on-off ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional organic semiconductor materials are used in organic TFTs, then the device can be manufactured at low cost and low temperature, but the field effect mobility is low and response speed is slow
Solution Approach 1:
The patent modifies the molecular structure of organic semiconductor materials by introducing specific substituents (fluoro, cyano, nitro groups) to change electronic parameters such as electron affinity and HOMO/LUMO levels. This structural parameter change enables achievement of high field effect mobility (0.1-10 cm²/Vs) while maintaining compatibility with low-cost, low-temperature manufacturing processes
Solution Approach 2:
The patent creates composite organic semiconductor materials by combining electron-accepting groups (fluoro, cyano, nitro) with aromatic hydrocarbon skeletons (naphthalene, anthracene, phenanthrene). This composite molecular structure achieves both high electron affinity for n-type conduction and high field effect mobility, resolving the contradiction between manufacturing ease and device performance
2Reliability
If silicon-based materials are used to fabricate TFTs, then the device performance is reliable, but the production cost increases significantly and substrate material selection is limited
Solution Approach 1:
The patent replaces expensive, temperature-sensitive silicon-based semiconductor materials with organic semiconductor materials that can be processed at low temperatures. This substitution enables use of inexpensive, lightweight resin substrates instead of expensive glass or metal substrates required for silicon TFTs, significantly reducing production cost while maintaining device functionality
Solution Approach 2:
The patent changes the fundamental material parameter from inorganic silicon-based semiconductors to organic semiconductors with tailored molecular structures. This parameter change enables low-temperature processing (below 200°C) compatible with flexible resin substrates, eliminating the high-temperature requirement of silicon TFT fabrication and expanding substrate material options
Data Source
AI summary
A compound for an organic thin film transistor having a structure represented by the following formula (1):wherein at least one of R1 to R6 is a substituent, and the remaining R1 to R6 are a hydrogen atom.