Semiconductor Chuck Temperature Cycling for High-Aspect-Ratio Etching
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Solution Overview
Problem
The challenge in semiconductor manufacturing is achieving high accuracy in processing layers with high aspect ratios during dry etching, particularly in forming memory holes for three-dimensional semiconductor memory devices, where reaction products on the etched surfaces inhibit processing accuracy and throughput.
Innovation Solution
A method involving a semiconductor manufacturing apparatus with a chamber and holder system that alternates between low and high temperatures by controlling the pressure of a thermally conductive gas, such as helium, to manage the etching process, promoting reaction product decomposition and improving processing accuracy and throughput.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If dry etching is performed continuously to improve productivity, then throughput increases, but reaction products accumulate on etched surfaces and processing accuracy deteriorates
Solution Approach 1:
The patent applies periodic action by alternating between etching processes and heating processes. During etching, reaction products form on the substrate surface. During subsequent heating processes, these reaction products are decomposed and removed. This periodic alternation maintains high processing accuracy across multiple etching cycles while preserving productivity, as the heating steps are integrated into the same chamber without requiring substrate removal.
Solution Approach 2:
The patent converts the harmful accumulation of reaction products into a beneficial process by using the heat from the heating process to decompose these products. The reaction products that would normally inhibit further etching are instead utilized as indicators for when heating should occur, and the heating energy that would otherwise be wasted is converted into a cleaning mechanism that restores etching accuracy.
2Manufacturing precision
If temperature is increased to decompose reaction products and improve processing accuracy, then manufacturing precision improves, but energy consumption increases
Solution Approach 1:
The patent merges the heating function into the existing etching chamber by integrating a heating unit with the substrate holder. This allows the same chamber and substrate handling system to perform both etching and heating functions, eliminating the need for separate heating equipment and reducing overall energy consumption while maintaining processing accuracy.
Solution Approach 2:
The patent applies parameter changes by dynamically adjusting the temperature of the substrate holder based on process requirements. During etching, the substrate is held at etching-appropriate temperatures. During reaction product removal, the temperature is increased to decompose products. This dynamic parameter adjustment optimizes energy usage by applying heat only when and where needed, rather than maintaining high temperature continuously.
3Manufacturing precision
If complex temperature control system is introduced to alternate between low and high temperatures, then manufacturing precision improves, but device complexity increases
Solution Approach 1:
The substrate holder is designed with multi-functionality, serving both as the mounting structure for the substrate during etching and as the heating unit for decomposing reaction products. This universal component eliminates the need for separate heating apparatus, reducing system complexity while enabling precise temperature control for both etching and cleaning operations.
Solution Approach 2:
The heating unit is integrated into the substrate holder itself, allowing the holder to self-regulate the substrate temperature. The control unit receives temperature information from detectors and automatically adjusts heating power to maintain optimal temperatures, enabling the system to self-manage temperature control without complex external intervention.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the processing accuracy of memory holes by alternating temperature states, effectively removing reaction products and improving etching efficiency, thereby improving the aspect ratio and shape precision of memory holes.
Implementation Method 1
supplying a first gas in contact with the substrate between the holder and the substrate; controlling a pressure of the first gas to a first pressure
Implementation Method 2
performing a first etching process of etching the layer to be processed using a reactive ion etching method
Implementation Method 3
performing a first etching process of etching the layer to be processed using a reactive ion etching method
Implementation Method 4
controlling a pressure of the first gas to a second pressure lower than the first pressure after the first etching process; performing a first reaction product removal
Data Source
AI summary
A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.