Electrostatic Chuck Through-Hole Shielding Against Abnormal Discharge

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Solution Overview

Problem

Existing plasma processing apparatuses experience abnormal discharge in through-holes of electrostatic chucks, which affects the reliability and efficiency of the plasma processing operation.

Innovation Solution

Incorporating a conductive structure that surrounds the through-holes and extends upward from the level of or above the bias electrode, reducing the potential difference and preventing abnormal discharge by adhering to the breakdown voltage defined by Paschen's Law.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If a through-hole is provided in the electrostatic chuck for heat transfer gas supply, then heat transfer efficiency is improved, but abnormal discharge occurs in the through-hole

Engineering Contradiction:
Improveheat transfer efficiencyVSAvoidabnormal discharge occurrence
Core Design Contradiction:
TemperatureVSReliability

Solution Approach 1:

A conductive structure is introduced as an intermediary element within the through-hole to modify the electrical field distribution. This conductive structure acts as a mediator between the plasma environment and the electrostatic chuck, preventing direct discharge paths while maintaining gas flow channels for heat transfer.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The conductive structure is positioned specifically at the lower portion of the through-hole where discharge is most likely to occur. This localized modification addresses the discharge problem at the critical location without affecting the overall heat transfer function of the through-hole.

Inventive Principle:
Principle #3Local quality

2Reliability

If the conductive structure extends higher in the through-hole, then abnormal discharge is reduced, but device complexity increases

Engineering Contradiction:
Improveabnormal discharge preventionVSAvoidconductive structure configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The conductive structure extends partially into the through-hole rather than fully blocking it. The extension height is optimized to provide sufficient discharge prevention while maintaining gas flow pathways, avoiding excessive action that would completely obstruct the through-hole and increase complexity unnecessarily.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively prevents or reduces abnormal discharge in the through-holes, ensuring stable plasma processing and maintaining the intended conductance for heat transfer gases, thereby enhancing the operational reliability and efficiency of the plasma processing apparatus.

Implementation Method 1

preventing abnormal discharge by adhering to the breakdown voltage defined by Paschen's Law

Methodology Applied
Scientific EffectPaschen's Law:

Implementation Method 2

an electrostatic clamp electrode inside the dielectric structure

Methodology Applied
Scientific EffectElectrostatic force: Electrostatics

Data Source

PatentUS20240222092A1Plasma processing apparatus and electrostatic chuck including a dielectric structure and an electrostatic claim electrode inside the dielectric structure
Publication Date: 2024.07.04 TOKYO ELECTRON LTD
  • US20240222092A1 patent drawing
  • US20240222092A1 patent drawing
  • US20240222092A1 patent drawing

AI summary

A plasma processing apparatus includes a plasma processing chamber, a base in the plasma processing chamber, and an electrostatic chuck on the base. The electrostatic chuck includes a dielectric structure having a substrate support surface and a ring support surface, an electrostatic clamp electrode inside the dielectric structure, a bias electrode inside the dielectric structure and below the electrostatic clamp electrode, and at least one conductive structure at least partially located inside the dielectric structure. The dielectric structure has a through-hole extending through the dielectric structure from the substrate support surface or the ring support surface to a lower surface of the dielectric structure. The at least one conductive structure surrounds the through-hole and extends upward from a same level as the bias electrode in a height direction or from a higher level than the bias electrode.