Circuit Redistribution Structure Trench Segmentation
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Solution Overview
Problem
Current circuit redistribution structures face challenges in achieving high stability, increased wiring density, reduced thickness, and lower manufacturing costs, particularly due to the limitations of line width and pitch miniaturization and internal stress-related warpage.
Innovation Solution
A method involving the formation of dielectric and conductive layers with strategically placed holes and vias, followed by the creation of trenches to relieve internal stress, allowing for the division of dielectric layers and the formation of separate circuit redistribution units without interposer structures, which enhances stability and reduces thickness and manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the line width and pitch of circuit redistribution structure are reduced to achieve miniaturization, then the wiring density is improved, but the structure stability deteriorates due to internal stress-induced warpage
Solution Approach 1:
The patent divides the circuit redistribution structure into multiple separate units by forming isolation trenches between different circuit regions. This segmentation isolates internal stresses in each unit, preventing stress-induced warpage while maintaining high wiring density through reduced line width and pitch within each segmented unit.
Solution Approach 2:
The patent introduces an interposer structure as an intermediary layer between the circuit redistribution structure and the substrate. This interposer serves as a stress buffer that absorbs and distributes internal stresses, preventing warpage and maintaining structural stability even when line width and pitch are reduced for higher wiring density.
2Stability of the object's composition
If interposer structures are used to maintain stability, then the structure stability is improved, but the thickness and manufacturing cost increase
Solution Approach 1:
The patent uses segmentation to divide the circuit redistribution structure into multiple isolated units through isolation trenches. This approach maintains structural stability by preventing stress propagation across the entire structure, eliminating the need for thick interposer layers and thereby reducing overall thickness while avoiding stress-induced warpage.
3Stability of the object's composition
If interposer structures are used to prevent warpage, then the structure stability is improved, but the manufacturing cost increases
Solution Approach 1:
The patent employs segmentation by forming isolation trenches to divide the circuit redistribution structure into separate units. This method maintains structural stability by isolating internal stresses, eliminating the need for expensive interposer structures and their associated complex manufacturing processes, thereby reducing overall manufacturing cost while preventing warpage.
Solution Approach 2:
The patent replaces expensive interposer structures with a more cost-effective isolation trench approach using standard dielectric materials and etching processes. This substitution maintains structural stability through stress isolation while significantly reducing material and manufacturing costs associated with interposer fabrication and integration.
Data Source
AI summary
A method for manufacturing a circuit redistribution structure includes the following steps. A first dielectric is formed on a carrier. Conductive blind vias are formed in the first dielectric. A first circuit redistribution layer is formed on the first dielectric. A second dielectric is formed on the first dielectric. First and second holes are formed on the second dielectric. A trench is formed in the second dielectric to divide the second dielectric into first and second portions. A first portion of the first circuit redistribution layer and the first hole are disposed in the first portion of the second dielectric, and a second portion of the first circuit redistribution layer and the second hole are disposed in the second portion of the second dielectric. Conductive blind vias are formed in the first and second holes, and a second circuit redistribution layer is formed on the second dielectric.