Circular Arc Ground Vias for Impedance Matching
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Solution Overview
Problem
Current semiconductor devices with penetration silicon vias face challenges in optimizing integration density and signal transmission efficiency due to varying impedance caused by ground via placement and shape, leading to higher insertion and reflection losses.
Innovation Solution
The semiconductor device incorporates ground vias formed in a circular arc shape, spaced apart from the main via, with radian angles greater than 0 but less than π, to create specific capacitance and inductance values, improving signal transmission by reducing insertion and reflection losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If ground vias are placed close to the main via to improve integration density, then the integration density is improved, but the impedance matching deteriorates leading to higher reflection losses
Solution Approach 1:
The ground vias are designed with circular arc shapes instead of straight lines or angles. This curvature allows the ground vias to be positioned closer to the main via while maintaining proper impedance matching, as the curved geometry distributes the electromagnetic field more evenly and reduces abrupt impedance transitions that would cause reflection losses.
Solution Approach 2:
The patent optimizes specific parameters of the circular arc ground vias, including the radian angle (greater than 0 but less than π), the radius of the arcs, and the spacing between ground vias. By carefully adjusting these parameters, the design achieves both high integration density and good impedance matching across the 0-80 GHz frequency range.
2Reliability
If complex ground via patterns are used to improve impedance matching, then the impedance matching is improved, but the device complexity increases
Solution Approach 1:
The ground via structure is segmented into multiple circular arc segments arranged around the main via. Each segment is a simple circular arc, but their collective arrangement creates the desired impedance matching effect. This segmentation allows complex electromagnetic field control through simple, repeatable geometric units.
Solution Approach 2:
The circular arc ground vias are positioned asymmetrically around the main via with specific radian angles less than π, creating an optimized electromagnetic field distribution. This asymmetric arrangement achieves superior impedance matching compared to symmetric patterns while maintaining manufacturing simplicity through the use of standard circular arc geometries.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves lower insertion and reflection losses across a frequency range of 0 to 80 GHz, with improved impedance matching and efficient signal transmission, as demonstrated by S-parameter graphs showing reduced signal loss and reflection.
Implementation Method 1
The ground vias 130 are formed in a circular arc shape at a position spaced apart from the main via 120... creating specific capacitance and inductance values
Implementation Method 2
The ground vias 130 are formed in a circular arc shape at a position spaced apart from the main via 120... creating specific capacitance and inductance values
Data Source
AI summary
Disclosed is a semiconductor device. For instance, the semiconductor device includes a main via formed on a dielectric and a ground via formed in a circular arc shape and spaced apart from the main via. The semiconductor device is superior in electric characteristics such as insertion loss or reflection loss and allows efficient use of space.