Circular Chamber Plasma Source for Uniform Semiconductor Crystallization
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Solution Overview
Problem
Existing techniques for generating thermal plasma in large areas are ineffective in crystallizing semiconductor films, leading to non-uniform treatment and potential substrate damage due to prolonged high-temperature exposure, which can result in cracking or peeling of glass substrates.
Innovation Solution
A plasma processing apparatus featuring a dielectric member forming a circular chamber with a gas supply and high-frequency coil, allowing for stable and efficient generation of plasma for high-temperature or low-temperature processing, enabling uniform treatment of the substrate surface for a short period.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If existing techniques for generating thermal plasma in large areas are used, then the treatment area is increased, but the treatment becomes non-uniform and substrate damage occurs due to prolonged high-temperature exposure
Solution Approach 1:
The plasma generation system is divided into multiple independent plasma sources arranged in an array. Each plasma source independently treats a specific region, allowing precise control of plasma parameters in different areas. This segmentation enables uniform treatment across large substrates while avoiding prolonged exposure in any single region, thereby preventing substrate damage.
Solution Approach 2:
The plasma sources are made movable or adjustable in position and orientation. By dynamically repositioning plasma sources or adjusting their emission directions, the system can adapt to different treatment areas and maintain optimal treatment conditions across the entire substrate surface, ensuring uniformity while controlling exposure time.
2Area of stationary object
If existing techniques for generating thermal plasma in large areas are used, then the treatment area is increased, but substrate damage occurs due to prolonged high-temperature exposure
Solution Approach 1:
By dividing the plasma treatment into multiple discrete plasma sources, each source treats a smaller region for a shorter duration. This segmentation reduces the cumulative thermal exposure to any single point on the substrate, preventing damage while still achieving comprehensive coverage of large areas through coordinated operation of multiple sources.
Solution Approach 2:
The plasma sources operate in a sequential or pulsed manner rather than continuously across the entire substrate. Each plasma source is activated periodically to treat its designated region, then deactivated before moving to the next region. This periodic operation limits the time any given substrate area is exposed to high temperatures, preventing damage while maintaining treatment effectiveness.
3Ease of manufacture
If thermal plasma jet crystallization method is used, then apparatus cost is reduced, but the process time is significantly long
Solution Approach 1:
Multiple plasma sources operate simultaneously in parallel to treat different regions of the substrate. This parallel processing approach maintains the simplicity and low cost of individual plasma source design while dramatically reducing total process time, as multiple areas are treated concurrently rather than sequentially.
Solution Approach 2:
The system maintains continuous plasma generation across the entire substrate surface through coordinated operation of multiple plasma sources. Rather than having gaps between treatment zones or requiring sequential operation, the continuous presence of multiple active plasma sources ensures uninterrupted treatment, maximizing throughput while keeping each source simple and cost-effective.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves stable and efficient plasma generation, allowing for uniform high-temperature processing of semiconductor films without substrate damage, treating all desired regions within a short time.
Implementation Method 1
a high-frequency power supply that is connected to the coil
Implementation Method 2
the thermal plasma can easily heat matter to a high temperature
Implementation Method 3
A plasma processing apparatus... allowing for stable and efficient generation of plasma for high-temperature or low-temperature processing, enabling uniform treatment of the substrate surface
Data Source
AI summary
According to the invention, there is provided a plasma processing apparatus which can generate plasma stably and efficiently, and can efficiently treat all of the desired regions to be treated of a base material within a short period of time. Provided is a plasma processing apparatus including an opening portion having an opening width of 1 mm or more; a dielectric member that defines a circular chamber constituting a circular space which communicates the opening; a gas supply pipe that introduces gas into an inside of the circular chamber; a coil that is provided in a vicinity of the circular chamber; a high-frequency power supply that is connected to the coil; and a base material mounting table on which a base material is disposed near the opening.