Circular Semiconductor ESD Device with Current Diversion Region
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Solution Overview
Problem
Electrostatic discharge (ESD) poses a significant threat to semiconductor devices, rendering them less operable or inoperable, and existing solutions fail to effectively mitigate this issue.
Innovation Solution
A semiconductor device configuration featuring a circular arrangement with an ESD device and a functional device, where the ESD device includes a current diversion region with a second conductivity type to divert current and inhibit crowding at the central drain region, while the functional device operates with a larger safe operation area, enhancing robustness and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional ESD device structure is used, then ESD protection is provided, but current crowding occurs at the central drain region reducing device reliability
Solution Approach 1:
The patent introduces a current diversion region with a specific conductivity type (opposite to the substrate) positioned between the central drain region and the ESD device. This local modification creates a non-uniform conductivity distribution that actively diverts current away from the central drain region, preventing current crowding while maintaining ESD protection functionality.
2Object-affected harmful factors
If ESD protection devices are added to semiconductor devices, then ESD damage is mitigated, but the safe operation area of the functional device is reduced
Solution Approach 1:
The patent introduces a current diversion region as an intermediary element between the ESD device and the functional device. This intermediary structure, with its specific conductivity type, acts as a current steering mechanism that protects the functional device from ESD-induced current crowding while maintaining a larger safe operation area compared to conventional ESD device configurations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces ESD impact and enhances the safe operation area, ensuring optimal circuit performance and robustness by utilizing a current diversion region in the ESD device and a larger safe operation area in the functional device.
Implementation Method 1
a current diversion region disposed in the substrate near the first central drain region, the current diversion region having a second conductivity type opposite the first conductivity type and configured to inhibit current crowding at the first central drain region
Data Source
AI summary
One or more semiconductor devices with an electrostatic discharge (ESD) device and a functional device in a circular arrangement are provided herein. The semiconductor device comprises a first circular sector, a second circular sector, and at least two disconnect regions disposed between the first circular sector and the second circular sector. The first circular sector comprises at least one ESD device. The second circular sector comprises at least one functional device. A single semiconductor device having a circular arrangement or configuration thus has an ESD device and a functional device.