Circular OPC Target for Contact Hole Patterning

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Solution Overview

Problem

Conventional optical proximity correction (OPC) techniques for contact hole structures in integrated circuits face limitations in image fidelity and process window as technology nodes shrink, leading to issues like side lobe printing, missing contact holes, and pattern fidelity, especially due to the use of square OPC targets which result in corner rounding and low pass filter effects.

Innovation Solution

A method involving the generation of a substantially circular optical proximity correction target, which is segmented and biased to improve image fidelity and process window, using design data to create a mask system that retains circular features throughout the OPC process, enhancing edge transitions and reducing light diffraction.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional square OPC targets are used for contact hole patterning, then the OPC process can be implemented with standard methodologies, but image fidelity deteriorates and process window decreases due to corner rounding and low pass filter effects

Engineering Contradiction:
Improveimage fidelityVSAvoidOPC target shape complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent applies spheroidality by replacing the conventional square OPC target with a substantially circular OPC target for contact hole patterning. This curvature-based approach eliminates corner rounding issues inherent in square targets and reduces low pass filter effects, thereby improving image fidelity and process window while maintaining manufacturability through standard OPC processes.

Inventive Principle:
Principle #14Spheroidality (Curvature)

2Productivity

If technology node size decreases for high-performance integrated circuits, then circuit performance improves, but optical proximity effects such as light diffraction and interference increasingly impact contact hole uniformity

Engineering Contradiction:
Improveintegrated circuit performanceVSAvoidcontact hole uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies preliminary anti-action by using a circular OPC target shape that preemptively counteracts optical proximity effects before patterning. The circular geometry inherently resists light diffraction and interference patterns that plague square targets at small dimensions, proactively maintaining contact hole uniformity as technology nodes scale down to improve circuit performance.

Inventive Principle:
Principle #9Preliminary anti-action

3Shape

If square OPC targets with serifs and dimensional biasing are used, then corner rounding can be induced to print circular holes, but side lobe printing and missing contact holes occur reducing process window

Engineering Contradiction:
Improvecontact hole circularityVSAvoidpattern fidelity
Core Design Contradiction:
ShapeVSReliability

Solution Approach 1:

The patent applies inversion by reversing the conventional approach: instead of modifying a square target to print a circular hole, it uses a circular target to directly print a circular hole. This fundamental reversal eliminates the need for serifs and dimensional biasing, thereby preventing side lobe printing and missing contact holes while maintaining pattern fidelity and contact hole circularity.

Inventive Principle:
Principle #13The other way round (Inversion)

Data Source

PatentUS8413083B2Mask system employing substantially circular optical proximity correction target and method of manufacture thereof
Publication Date: 2013.04.02 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US8413083B2 patent drawing
  • US8413083B2 patent drawing
  • US8413083B2 patent drawing

AI summary

A method of manufacture of a mask system includes: providing design data; generating a substantially circular optical proximity correction target from the design data; biasing a segment of the substantially circular optical proximity correction target; and generating mask data based on the shape produced by biasing the segment of the substantially circular optical proximity correction target.