Circular Sputtering Stage Arrangement for Film Uniformity
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Solution Overview
Problem
In semiconductor device manufacturing, existing sputtering apparatuses face challenges in achieving uniform film thickness distribution across multiple substrates due to limitations in target size and arrangement, leading to potential concave film thickness distributions when substrates are rotated.
Innovation Solution
The apparatus features a circular arrangement of stages around a central position within the processing container, with a target positioned above to emit plasma particles that overlap rotationally symmetrically with the stages, allowing for uniform film formation without increasing the target size or apparatus footprint.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multiple substrates are arranged closely around the target to increase processing capacity, then productivity is improved, but uniform film thickness distribution deteriorates due to overlapping regions causing concave film thickness
Solution Approach 1:
The patent applies asymmetry by intentionally designing non-uniform spacing between adjacent substrates in the circular arrangement. Specifically, the spacing is made smaller in radial directions (toward and away from the target) and larger in tangential directions (left and right). This asymmetric spacing pattern prevents the formation of concave film thickness regions while maintaining high substrate density, thus resolving the contradiction between productivity and film thickness uniformity.
2Area of stationary object
If target size is increased to cover more substrates, then film coverage is improved, but apparatus footprint and device complexity increase
Solution Approach 1:
The patent transitions from a linear/target-centered coverage approach to a circular/dimensional arrangement where substrates are positioned around the target in a radial pattern. This dimensional change allows a single target of moderate size to effectively cover multiple substrates by utilizing the circular geometry, thereby achieving extensive coverage without proportionally increasing target size or apparatus footprint.
3Area of stationary object
If substrates are arranged in a circular pattern to improve space utilization, then area efficiency is improved, but film thickness uniformity deteriorates due to overlapping regions
Solution Approach 1:
The patent applies local quality by implementing position-dependent spacing adjustments in the circular substrate arrangement. The spacing between substrates is locally optimized based on their angular position: tighter spacing radially (toward/away from target) and wider spacing tangentially (left/right). This local quality adjustment ensures uniform film thickness across all substrates while maintaining high overall space utilization efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables uniform film thickness distribution both in-plane and inter-plane across multiple substrates, preventing concave film thickness issues by ensuring target particles from a single target reach all substrates efficiently, even when stages are closely arranged.
Implementation Method 1
a target made of a material to be deposited is disposed inside a vacuum processing container and a magnetic field and an electric field are generated inside the processing container to generate plasma so as to sputter the target with plasma ions
Implementation Method 2
generate plasma so as to sputter the target with plasma ions
Data Source
AI summary
An apparatus for performing a sputtering process on a substrate includes: a processing container configured to accommodate a plurality of substrates; a plurality of stages provided inside the processing container to respectively place the plurality of substrates thereon and disposed to be arranged along a circle surrounding a preset center position; and a target disposed at a position above the stages to cause target particles to be emitted by plasma formed inside the processing container such that the target particles adhere to the substrates respectively placed on the stages, wherein the stages are arranged such that an emission region in which the target particles are emitted from the target and overlapping regions in which the substrates respectively placed on the stages overlap are arranged at positions that are rotationally symmetrical around the preset center position when viewed in a plan view from above the target.