Circular Thin Film Transistor for Flexible Display Stability
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Solution Overview
Problem
Current flexible display screens using rectangular thin film transistors (TFTs) experience significant changes in characteristics when bent, leading to inconsistent image display due to the breaking of film layers, affecting the reliability of image display.
Innovation Solution
A thin film transistor with a circular or annular semiconductor active layer and nested annular electrode patterns is designed, which reduces the change in characteristics when bent, improving the reliability of image display by minimizing parasitic capacitance and maintaining stable output resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If rectangular TFTs are used in flexible display screens, then the manufacturing process is simple and easy to implement, but the film layers break when bent causing significant changes in characteristics and inconsistent image display
Solution Approach 1:
The patent applies curvature principle by designing the TFT with a circular channel structure instead of the conventional rectangular shape. The source electrode, drain electrode, and active layer are arranged in a circular pattern, which allows the transistor to maintain its electrical characteristics when the flexible display is bent in any direction, eliminating the film layer breaking issue associated with rectangular designs.
2Reliability
If circular or annular electrode patterns are used, then parasitic capacitance is minimized and output resistance remains stable when bent, but the manufacturing precision requirements increase
Solution Approach 1:
The patent implements nesting principle by arranging the source electrode, gate electrode, and drain electrode in concentric circular patterns. The orthogonal projections of these electrodes on the substrate present nested circular shapes, which optimizes the electrical field distribution and minimizes parasitic capacitance while maintaining manufacturing feasibility through standardized circular patterning processes.
3Device complexity
If rectangular TFTs are used, then the device structure is simple and easy to manufacture, but the image display quality becomes inconsistent when the display is bent
Solution Approach 1:
The patent applies curvature principle by designing the TFT with a circular channel structure instead of the conventional rectangular shape. The source electrode, drain electrode, and active layer are arranged in a circular pattern, which allows the transistor to maintain its electrical characteristics when the flexible display is bent in any direction, eliminating the film layer breaking issue associated with rectangular designs.
Solution Approach 2:
The patent employs asymmetry principle by positioning the source and drain electrodes at specific angular positions relative to the gate electrode in the circular structure. This asymmetric arrangement within the symmetric circular framework optimizes the current flow path and electrical field distribution, enhancing device performance while maintaining bending stability.
Data Source
AI summary
The present disclosure relates to a thin film transistor and a manufacturing method thereof, a flexible display screen and a display device. The thin film transistor is disposed on a substrate. The thin film transistor includes: an active layer, a source-drain conductive layer, and a gate conductive layer. The gate conductive layer includes a gate electrode, and the gate conductive layer is disposed on one side of the active layer away from the substrate and insulated from the active layer. The source-drain conductive layer includes a first electrode and a second electrode. The orthogonal projections of the first electrode, the gate electrode, and the second electrode on the substrate are sequentially nested from inside to outside and separately disposed. The reliability of image display may be improved.