Clamp Diode Self-Test Circuit for Plasma Damage Detection
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
During semiconductor device fabrication, particularly in system-on-chip (SOC) devices, electrical charge accumulation due to plasma processing can lead to gate oxide damage in transistors, causing immediate or delayed device failure.
Innovation Solution
Incorporation of bypass paths with clamp diode configurations and additional transistors in the circuit design to protect transistors from electrical discharge during fabrication, allowing for detection and mitigation of plasma-induced damage through self-test algorithms.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If plasma processing is used for fabrication, then device manufacturing capability is improved, but electrical charge accumulation occurs, causing immediate or delayed device failure
Solution Approach 1:
The clamp diode is pre-installed in the circuit design before plasma processing occurs. This protective structure is positioned in advance to intercept and safely discharge accumulated charges during plasma processing steps, preventing both immediate failure and latent damage that would manifest later in the field.
2Reliability
If bypass paths with clamp diodes are added to protect transistors, then device reliability is improved, but circuit complexity increases
Solution Approach 1:
The protection function is extracted as a separate, dedicated component (clamp diode) rather than attempting to integrate protection functionality into existing circuit elements. This modular approach simplifies the overall design by clearly separating the protection function from the signal processing function, making the circuit easier to analyze and manufacture despite the added component.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents gate oxide damage by diverting excessive electrical discharge to ground, enabling detection of damaged devices and allowing for reduced operational frequency to maintain error-free device functionality.
Implementation Method 1
electrical charge accumulation due to plasma processing can lead to gate oxide damage in transistors
Implementation Method 2
damage that may occur due to electrical discharge resulting from plasma-induced charges in a device's electrical structures
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A system and method for electronic device damage detection is presented. A first input signal is supplied to an input terminal of an electronic device. The electronic device includes a input terminal, a first electronic circuit including a first transistor, wherein a control terminal of the first transistor is electrically connected to the input terminal, a second electronic circuit including a clamp diode transistor, wherein the clamp diode is electrically connected to the input terminal, wherein the clamp diode transistor is configured to receive a control input signal and when the control input signal has a first value the clamp diode transistor is conductive, and an output terminal electrically connected to the first electronic circuit and the second electronic circuit. The control input signal is switched between the first value and a second value and an output of the electronic device is monitored to detect a malfunction.