Class AB Amplifier Bias Circuit for Stable Quiescent Current

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Solution Overview

Problem

Class AB amplifiers face significant variations in quiescent current due to changes in process, temperature, and supply voltage, leading to reduced power efficiency and linearity across a wide range of operating conditions.

Innovation Solution

The proposed solution involves an NMOS bias generator design that accurately replicates the quiescent drain-to-source voltage by using a diode-coupled transistor to generate bias currents, splitting currents, and setting the drain voltage to a common-mode voltage, ensuring robustness against parameter variations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If class AB amplifier is biased to have low quiescent current under nominal conditions, then power consumption is reduced, but quiescent current varies greatly when parameters like process, temperature, or supply voltage deviate from nominal values

Engineering Contradiction:
Improvepower consumptionVSAvoidquiescent current stability
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent implements a feedback mechanism where the bias circuit continuously monitors the actual quiescent current and adjusts the bias voltage accordingly. The bias circuit includes a feedback path that senses the current through the output transistors and modifies the gate voltage to maintain the desired quiescent current level, thereby resolving the contradiction between low power consumption and current stability under varying conditions

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent dynamically changes the bias voltage parameter based on operating conditions such as temperature, process variations, and supply voltage. The bias circuit adjusts the gate-to-source voltage of the output transistors in real-time to compensate for parameter drift, ensuring that quiescent current remains stable across different operating points while maintaining low power consumption

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If bias circuit uses traditional fixed bias voltage, then circuit complexity is low, but amplifier linearity and power efficiency deteriorate under varying operating conditions

Engineering Contradiction:
Improvebias circuit complexityVSAvoidamplifier linearity
Core Design Contradiction:
Device complexityVSReliability

Solution Approach 1:

The patent transitions from a static fixed bias voltage approach to a dynamic biasing scheme where the bias voltage automatically adjusts in response to changing operating conditions. The bias circuit incorporates temperature compensation elements and supply voltage sensing that enable it to adapt its output voltage dynamically, thereby maintaining amplifier linearity without significantly increasing circuit complexity

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The bias circuit is designed to self-regulate by using the amplifier's own operating parameters (such as quiescent current and supply voltage) as feedback signals. This self-service mechanism allows the bias circuit to automatically correct for variations in process, temperature, and supply voltage without requiring external control, thus maintaining linearity while keeping the overall system complexity low

Inventive Principle:
Principle #25Self-service

Data Source

PatentEP2489122B1Amplifier bias techniques
Publication Date: 2014.06.18 QUALCOMM INC
  • EP2489122B1 patent drawingFigure 1
  • EP2489122B1 patent drawingFigure 2
  • EP2489122B1 patent drawingFigure 2A

AI summary

Techniques for generating a bias voltage for a class AB amplifier having first and second active transistors. In an exemplary embodiment, a diode-coupled first transistor supports a first current, and the gate voltage of the first transistor is coupled to the gate voltage of the first active transistor. The first current is split into a second current and a first auxiliary current supported by a second transistor, which is biased at a desired common-mode output voltage of the class AB amplifier. The first auxiliary current is further combined with a third current to be supported by a third transistor, with the third transistor configured to replicate the characteristic of the second active transistor. Further techniques are provided for setting the drain voltage of the third transistor to be close to the common-mode output voltage. The techniques described herein may be used to provide a bias voltage for the NMOS and/or PMOS active transistors in a class AB amplifier.