Decomposing Cleaning Composition Mixing for Etch Rate Retention
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Solution Overview
Problem
The etch rate of decomposing cleaning compositions containing fluorine compounds decreases over time due to the oxidation of N-substituted amide compounds used as solvents, which reduces their reactivity and effectiveness.
Innovation Solution
A method involving the mixing of N-substituted amide compounds without a direct hydrogen bond to nitrogen and quaternary alkylammonium fluoride under an inert gas atmosphere, followed by encapsulation in an inert gas environment, to minimize solvent oxidation and maintain etch rate stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If N-substituted amide compounds are used as solvents in decomposing cleaning compositions, then the reactivity and effectiveness of fluorine compounds is enhanced, but the etch rate decreases over time due to oxidation of the solvent
Solution Approach 1:
The patent applies the inert atmosphere principle by conducting the mixing process under an inert gas atmosphere (nitrogen or argon) to prevent oxidation of the N-substituted amide compound. The composition is also filled into containers under inert atmosphere and sealed to maintain stability during storage, thereby preventing the decrease in etch rate while preserving the high reactivity provided by the amide solvent.
2Ease of manufacture
If the decomposing cleaning composition is prepared and stored in air, then the preparation process is simple, but the etch rate decreases over time due to oxidation
Solution Approach 1:
The patent implements inert atmosphere protection during both preparation and storage phases. The mixing is performed under nitrogen or argon atmosphere, and the composition is filled into containers under the same inert conditions before sealing. This approach maintains etch rate reliability while keeping the process relatively simple by using standard inert gas handling procedures.
3Device complexity
If oxidation of the solvent is allowed to occur, then the preparation process requires no special conditions, but the reactivity of fluoride ions is reduced
Solution Approach 1:
The patent uses inert atmosphere (nitrogen or argon) during mixing and storage to prevent oxidation of the N-substituted amide compound. This maintains the high reactivity of fluoride ions by preserving the solvent's properties, while the added complexity is minimal—primarily requiring inert gas supply and atmosphere control during preparation and storage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the retention of etch rate over time, ensuring effective cleaning performance for adhesive residues on semiconductor wafers.
Implementation Method 1
The etch rate of decomposing cleaning compositions containing fluorine compounds decreases over time due to the oxidation of N-substituted amide compounds used as solvents
Data Source
AI summary
Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. In particular, a method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof is provided, the method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.