Cleaning Composition for Semiconductor Metal Wiring
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Solution Overview
Problem
In the manufacturing of semiconductor and display technologies, existing cleaning compositions fail to effectively remove contaminants such as particles, metal atoms, and organic materials from metal wiring, leading to reliability issues and corrosion, particularly with copper (Cu) surfaces.
Innovation Solution
A cleaning composition comprising 0.01 to 5 wt% of a chelating agent, 0.01 to 5 wt% of an alkali compound, 0.01 to 1 wt% of an inorganic acid, and deionized water, along with a corrosion inhibitor, is used to form a cleaning process that improves the reliability of semiconductor apparatus by removing contaminants and preventing re-adsorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If existing cleaning compositions are used, then the cleaning process is simple, but contaminants such as particles, metal atoms and organic materials cannot be effectively removed
Solution Approach 1:
The patent combines multiple cleaning agents (chelating agent, organic acid, inorganic acid, and alkali compound) into a single cleaning composition. This merging of different chemical components allows the composition to simultaneously remove various types of contaminants (particles, metal atoms, organic materials) that cannot be effectively removed by existing single-component cleaning compositions.
Solution Approach 2:
The cleaning composition uses a composite formulation containing four distinct chemical components working together: a chelating agent (0.01-5 wt%), an organic acid (0.01-5 wt%), an inorganic acid (0.01-1 wt%), and an alkali compound (0.01-5 wt%). This composite material approach enables the composition to address multiple contamination types and provide both cleaning and corrosion prevention functions.
2Reliability
If existing cleaning compositions are used, then the composition formulation is simple, but corrosion on Cu surfaces occurs
Solution Approach 1:
The cleaning composition includes a corrosion inhibitor component that proactively prevents corrosion before it can occur. By incorporating the corrosion inhibitor alongside the cleaning agents, the composition provides preliminary protection to the Cu surface during the cleaning process, counteracting the potential corrosive effects of the acidic components.
Solution Approach 2:
The patent carefully controls the pH and concentration parameters of the cleaning composition. The composition maintains a balanced pH through the combination of acidic components (organic acid 0.01-5 wt%, inorganic acid 0.01-1 wt%) and alkali compound (0.01-5 wt%), ensuring effective cleaning while preventing excessive corrosion. The specific concentration ranges are optimized to achieve both cleaning effectiveness and corrosion resistance.
3Reliability
If existing cleaning compositions are used, then the cleaning process is straightforward, but re-adsorption of contaminants occurs
Solution Approach 1:
The chelating agent in the cleaning composition acts as an intermediary that binds to metal atoms and prevents their re-adsorption onto the Cu surface. The chelating agent (0.01-5 wt%) forms stable complexes with metal contaminants, keeping them in solution and preventing them from redepositing on the cleaned surface, thus providing stable contaminant removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The cleaning composition effectively removes contaminants and prevents corrosion on Cu surfaces, enhancing the reliability of semiconductor manufacturing processes and maintaining the integrity of metal wiring.
Implementation Method 1
the chelating agent includes an amino acid compound
Implementation Method 2
about 0.01 to about 5 wt % of an organic acid; about 0.01 to about 1 wt % of an inorganic acid
Implementation Method 3
about 0.01 to about 5 wt % of an alkali compound
Implementation Method 4
The cleaning process improves reliability of a semiconductor apparatus by removing contaminants such as particles, metal atoms and organic materials
Implementation Method 5
The cleaning composition further includes about 0.01 to about 3 wt % of a corrosion inhibitor
Data Source
AI summary
A cleaning composition includes about 0.01 to about 5 wt % of a chelating agent; about 0.01 to about 0.5 wt % of an organic acid; about 0.01 to about 1.0 wt % of an inorganic acid; about 0.01 to about 5 wt % of an alkali compound; and deionized water.