Cleaning Liquid Composition for Semiconductor Etching Residue Removal
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Solution Overview
Problem
Current cleaning liquids for semiconductor devices fail to adequately remove organosiloxane thin films and dry etching residues without damaging low-dielectric constant films, copper, and hard masks, which is critical for producing high-quality semiconductor devices.
Innovation Solution
A cleaning liquid composition comprising quaternary ammonium hydroxide, potassium hydroxide, a water-soluble organic solvent, and pyrazoles is used to effectively remove organosiloxane thin films, dry etching residues, and photoresists while minimizing damage to low-dielectric constant films, copper, and hard masks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If oxygen plasma is used to remove photoresist and organosiloxane thin film, then removal efficiency is improved, but damage to low-k film occurs
Solution Approach 1:
The patent replaces the mechanical/physical removal method (oxygen plasma) with a chemical cleaning liquid composition. The cleaning liquid contains specific concentrations of quaternary ammonium hydroxide (0.01-10 wt%), organic solvent (5-50 wt%), and chelating agent (0.01-5 wt%), which chemically dissolve and remove photoresist and organosiloxane thin film without the harsh physical effects of plasma that damage low-k films.
Solution Approach 2:
The patent changes the chemical parameters of the cleaning solution by specifying precise concentration ranges of multiple components: quaternary ammonium hydroxide (0.01-10 wt%), organic solvent (5-50 wt%), and chelating agent (0.01-5 wt%). This parameter optimization enables effective removal of residues while maintaining compatibility with low-k films, copper, and hard masks.
2Object-affected harmful factors
If cleaning liquid is used to remove residues, then damage to low-k film is reduced, but removal efficiency of organosiloxane thin film decreases
Solution Approach 1:
The patent creates a composite cleaning liquid composition combining multiple chemical agents: quaternary ammonium hydroxide (for base cleaning), organic solvent (for organosiloxane dissolution), and chelating agent (for metal ion complexation). This composite formulation achieves both gentle action on low-k films and effective removal of organosiloxane thin film and dry etching residues.
Solution Approach 2:
The cleaning liquid composition is designed to perform multiple functions simultaneously: removing photoresist, removing organosiloxane thin film, removing dry etching residues, and protecting sensitive structures (low-k film, copper, hard mask, barrier metal). This multi-functional formulation resolves the contradiction between gentleness and effectiveness.
3Reliability
If copper is used as wiring material, then electrical resistance is reduced, but susceptibility to cleaning liquid corrosion increases
Solution Approach 1:
The chelating agent in the cleaning liquid composition acts as an intermediary that binds metal ions, including copper ions, preventing direct corrosive interaction between the cleaning liquid and copper wiring. This allows the use of copper for its low electrical resistance while protecting it from corrosion during the cleaning process.
4Manufacturing precision
If hard mask is inserted between resist and pattern film, then pattern formation precision is improved, but number of processing steps increases
Solution Approach 1:
The cleaning liquid composition is designed to remove hard mask residues along with photoresist and organosiloxane thin film in a single step. By incorporating specific chelating agents and organic solvents, the cleaning solution effectively dissolves and removes hard mask materials, eliminating the need for separate hard mask removal steps while maintaining pattern formation precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed cleaning method allows for the precise and high-yield removal of organosiloxane thin films and dry etching residues, preventing damage to low-dielectric constant films, copper, and hard masks, thereby enabling the production of high-quality semiconductor devices.
Implementation Method 1
A cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a hard mask, a barrier metal, a barrier dielectric film, and a hard mask, and removes an organosiloxane thin film, a dry etching residue, and a photoresist on a treatment target surface
Implementation Method 2
0.0005 to 10% by weight of pyrazoles
Data Source
AI summary
The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25% by weight of a quaternary ammonium hydroxide, 0.001 to 1.0% by weight of potassium hydroxide, 5 to 85% by weight of a water-soluble organic solvent, and 0.0005 to 10% by weight of pyrazoles.