Aqueous Cleaning Liquid Composition for Low-Corrosion Etch Residue Removal
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Solution Overview
Problem
Existing cleaning agents for removing dry etching residues in semiconductor manufacturing adversely affect metal wiring materials, necessitating a composition with improved anticorrosion properties.
Innovation Solution
An aqueous cleaning liquid comprising hydrofluoric acid and tetradecylphosphonic acid, with specific pH and concentration ranges, to enhance anticorrosion properties while maintaining cleaning efficacy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional cleaning agents are used to remove dry etching residues, then cleaning efficacy is improved, but anticorrosion properties of metal wiring materials deteriorate
Solution Approach 1:
The patent changes the chemical composition parameters of the cleaning agent by specifying precise concentration ranges: hydrofluoric acid at 0.001-10 wt%, tetradecylphosphonic acid at 0.0001-0.1 wt%, and controlled pH (2-7). These parameter optimizations enable the cleaning agent to effectively remove dry etching residues while minimizing corrosion to metal wiring materials through balanced chemical properties.
Solution Approach 2:
The patent creates a composite cleaning agent system combining hydrofluoric acid (for residue removal) with tetradecylphosphonic acid (for corrosion protection) and other complementary components. This composite formulation achieves synergistic effects where the combination of chemicals provides both strong cleaning capability and anticorrosion protection, resolving the contradiction between cleaning efficacy and material protection.
2Productivity
If hydrofluoric acid is used for dry etching residue removal, then cleaning properties are improved, but anticorrosion effect on metal wiring deteriorates
Solution Approach 1:
The patent introduces tetradecylphosphonic acid as an intermediary substance that mediates between the aggressive cleaning action of hydrofluoric acid and the metal wiring materials. This intermediary component modifies the chemical environment, allowing hydrofluoric acid to effectively remove residues while the tetradecylphosphonic acid provides a protective mechanism that reduces direct corrosive attack on the metal surfaces.
Solution Approach 2:
The patent optimizes the concentration parameter of hydrofluoric acid to a specific range (0.001-10 wt%) and combines it with tetradecylphosphonic acid at 0.0001-0.1 wt%. This parameter optimization ensures that the cleaning strength is sufficient for residue removal while the added phosphonic acid provides adequate corrosion protection, balancing the two opposing requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides effective residue removal with enhanced protection for metal wiring materials, ensuring minimal erosion and improved stability.
Implementation Method 1
hydrofluoric acid has cleaning properties such as dry etching residue removal properties
Implementation Method 2
the aqueous composition has satisfactory anticorrosion properties
Data Source
AI summary
An aqueous cleaning liquid including hydrofluoric acid and tetradecylphosphonic acid, and a method of cleaning an electronic device, contacting the electronic device with the aqueous cleaning liquid.