Clock Gate Cell Layout With Interleaved Decoupling Capacitors

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Solution Overview

Problem

In semiconductor devices, the segregation of clock gate blocks and decoupling capacitor blocks leads to uneven current distribution, increasing susceptibility to self-heating and electromigration, which hampers efficient operation.

Innovation Solution

Interleaving clock gate blocks and decoupling capacitor blocks within a cell region to distribute higher-current-flow conductors more evenly, reducing the concentration of current and thereby mitigating issues like self-heating and electromigration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If clock gate blocks are segregated from decoupling capacitor blocks, then device complexity is reduced and manufacturing is simplified, but current flow becomes concentrated causing self-heating and electromigration

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidself-heating and electromigration
Core Design Contradiction:
Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

The patent merges clock gate blocks and decoupling capacitor blocks into a unified interleaved structure where they are distributed alternately within the same cell region. This combination allows current from multiple clock gates to be distributed through shared power and ground lines that benefit from the decoupling capacitors, reducing self-heating and electromigration while maintaining manufacturing simplicity through standardized cell design.

Inventive Principle:
Principle #5Merging (Combining)

2Object-affected harmful factors

If clock gate blocks are interleaved with decoupling capacitor blocks, then current distribution is improved and self-heating is reduced, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improveself-heating and electromigrationVSAvoidlayout complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent segments the cell region into repeating units where clock gate blocks and decoupling capacitor blocks are interleaved in a systematic pattern. This segmentation approach breaks down the complex interleaved layout into manageable, repeatable modules that can be easily designed and manufactured, reducing overall device complexity while maintaining the current distribution benefits.

Inventive Principle:
Principle #1Segmentation

3Object-affected harmful factors

If clock gate blocks are interleaved with decoupling capacitor blocks, then current distribution is enhanced, but the area occupied by decoupling capacitors increases

Engineering Contradiction:
Improvecurrent concentrationVSAvoidcell region area
Core Design Contradiction:
Object-affected harmful factorsVSArea of stationary object

Solution Approach 1:

The patent applies local quality by placing decoupling capacitor blocks only in specific locations where they are most needed - interleaved with groups of clock gate blocks that have high current demand. This selective placement ensures that decoupling capacity is provided exactly where current concentration would cause problems, rather than uniformly distributing capacitors throughout the entire device, thus minimizing total area while effectively addressing current distribution issues.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS20230402446A1Semiconductor device and method of operating same
Publication Date: 2023.12.14 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20230402446A1 patent drawing
  • US20230402446A1 patent drawing
  • US20230402446A1 patent drawing

AI summary

A semiconductor device having a cell region, the cell region including a first set of one or more first blocks and a second set of one or more second blocks. Each of the first blocks including a clock gate and each of the second blocks includes a decoupling capacitor. The first set has two or more first blocks and/or the second set has two or more second blocks. The first blocks of the first set are interleaved with the second blocks of the second set.