Closed-Loop Magnetic Wire Memory Element With Stress-Driven Domain Wall Circulation
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Solution Overview
Problem
Advanced controls are necessary for accurately moving domain walls in spin shift register-type memory, but stable operations are difficult due to the complexity of sequentially moving domain walls one bit at a time in magnetic wire memory systems.
Innovation Solution
A magnetic memory element with a closed-loop magnetic wire, a stress application unit, and a recording/reproducing unit, where stress is applied to cause domain walls to circle around the loop, allowing for continuous movement and simplifying the operation by eliminating the need for high conductivity layers and advanced bit unit movement controls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If domain walls are sequentially moved one bit at a time in spin shift register-type memory, then memory capacity can be increased, but operation stability deteriorates due to the complexity of advanced controls required
Solution Approach 1:
Instead of sequentially moving domain walls one bit at a time through complex control mechanisms, the patent inverts the approach by applying a single stress to cause domain walls to automatically circulate around the entire closed-loop magnetic wire. This inversion eliminates the need for complex sequential control while maintaining high memory capacity through continuous domain wall circulation and multiple reading points along the loop.
2Speed
If high conductivity magnetic layers are used to move domain walls, then domain wall movement can be achieved, but device complexity increases due to the need for advanced control mechanisms
Solution Approach 1:
The patent extracts and eliminates the high conductivity magnetic layer from the system, replacing it with a stress application mechanism. By removing this complex component, the system achieves domain wall movement through a simpler stress-based approach that does not require advanced control mechanisms, while still enabling effective domain wall circulation around the closed-loop magnetic wire.
Solution Approach 2:
The patent replaces the electrical/mechanical system involving high conductivity layers and current-driven domain wall movement with a mechanical stress application system. This substitution simplifies the control mechanism by using direct mechanical stress to induce domain wall circulation, eliminating the need for complex electrical control infrastructure.
3Quantity of substance
If multiple domain walls are sequentially controlled, then storage capacity increases, but power consumption increases due to repeated control operations
Solution Approach 1:
The patent implements continuous useful action by applying a single stress that causes domain walls to circulate continuously around the closed-loop magnetic wire. This continuous circulation allows multiple domain walls to pass multiple reading points repeatedly without requiring repeated control operations, thereby maintaining high storage capacity while significantly reducing power consumption through sustained, efficient domain wall motion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable and reliable operations with increased storage capacity and reduced power consumption, as domain walls can move continuously without requiring high conductivity layers, allowing for efficient writing and reading of memory information.
Implementation Method 1
a stress application unit configured to cause the domain walls to circle around along the closed loop a plurality of times by applying stress to the magnetic wire
Data Source
AI summary
According to one embodiment, a magnetic memory element includes: a magnetic wire, a stress application unit, and a recording/reproducing unit. The magnetic wire includes a plurality of domain walls and a plurality of magnetic domains separated by the domain walls. The magnetic wire is a closed loop. The stress application unit is configured to cause the domain walls to circle around along the closed loop a plurality of times by applying stress to the magnetic wire. The recording/reproducing unit is configured to write memory information by changing magnetizations of the circling magnetic domains as the domain walls circle around and to read the written memory information by detecting the magnetizations of the circling magnetic domains.