Cluster Apparatus Side Nozzle Segmentation for Epitaxial Growth
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Solution Overview
Problem
In typical batch-type selective epitaxial growth devices, non-uniform gas flow due to reaction gas spraying from side nozzles leads to deteriorated film uniformity and reduced productivity, as most gas flows into gaps between the inner tube and substrate rather than reacting on the substrate surface.
Innovation Solution
The apparatus includes a process tube with a side nozzle unit featuring first and second side nozzles for etching and depo gases, along with side curtain nozzles to improve gas straightness, a pre-depo nozzle for precoating, and a lower cleaning nozzle for efficient cleaning, all within a cluster equipment design that maintains vacuum conditions and includes a boat rotation unit controlled by a control unit to optimize gas supply stages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If reaction gas is sprayed from a side nozzle in a typical batch-type selective monocrystal growth device, then the gas supply mechanism is simple, but the gas flow becomes non-uniform and most gas flows into the gap between the inner tube and substrate without sufficiently reacting on the substrate
Solution Approach 1:
The side nozzle is divided into multiple nozzle units arranged along the substrate surface, with each unit having multiple spray holes positioned at different locations. This segmentation allows gas to be supplied uniformly across different regions of the substrate, preventing gas from concentrating in the gap between the inner tube and substrate while maintaining a relatively simple overall structure.
Solution Approach 2:
The nozzle units are positioned and oriented to deliver gas directly to specific local regions of the substrate surface. The spray holes are arranged to target areas where gas flow was previously insufficient, creating locally optimized gas distribution that improves overall film uniformity without requiring complete redesign of the entire gas supply system.
2Reliability
If gas flows into the gap between the inner tube and substrate, then the device structure is maintained, but the reaction efficiency decreases and film formation time increases
Solution Approach 1:
Multiple nozzle units with distributed spray holes segment the gas flow path, directing gas streams toward the substrate surface from various positions. This prevents gas from bypassing the substrate through the gap and ensures that gas reacts with the substrate before being exhausted, thereby improving reaction efficiency and reducing film formation time while preserving the basic device structure.
Solution Approach 2:
The multiple nozzle units act as intermediaries that intercept and redirect the gas flow before it can enter the gap between the inner tube and substrate. By positioning spray holes to face the substrate, the nozzles mediate the gas flow path, ensuring gas reacts with the substrate surface and reducing wasted gas that would otherwise escape through the gap, thus improving productivity.
3Device complexity
If a single side nozzle is used, then the device complexity is low, but the gas distribution uniformity across the substrate surface is insufficient
Solution Approach 1:
The single side nozzle is segmented into multiple nozzle units, each containing multiple spray holes. This segmentation increases gas distribution uniformity across the substrate surface by delivering gas from multiple positions simultaneously, while the modular nature of the nozzle units keeps the overall device complexity manageable through standardized components.
Solution Approach 2:
Multiple nozzle units are merged into a single integrated side nozzle assembly that functions as one component. This combining approach maintains relatively low device complexity by treating the multiple spray units as a unified structure, while still achieving improved gas distribution uniformity through the coordinated action of multiple spray holes positioned across different locations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures uniform gas flow on the substrate, improving film quality and increasing productivity by reducing the occupied area while maintaining batch-type processing efficiency.
Implementation Method 1
a heater assembly disposed to surround the process tube
Implementation Method 2
the side nozzle unit includes first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth
Implementation Method 3
side curtain nozzles disposed in parallel to each other with the first side nozzle therebetween to spray an inert gas so as to improve straightness of a first process gas sprayed from the first side nozzle
Implementation Method 4
a boat rotation unit rotating the substrate stack unit
Implementation Method 5
a pre-depo nozzle for precoating of the inside of the inner tube
Implementation Method 6
a lower cleaning nozzle for cleaning a lower end of the inner tube when the inside of the inner tube is cleaned
Data Source
AI summary
Provide an apparatus for selective epitaxial growth. The apparatus for selective epitaxial growth, the apparatus comprising, a process tube comprising an inner tube in which a substrate stack unit for receiving a plurality of substrates is accommodated and an outer tube surrounding the inner tube, a heater assembly disposed to surround the process tube and a side nozzle unit vertically disposed inside the process tube, wherein the side nozzle unit comprises first and second side nozzles for respectively spraying an etching gas and a depo gas for the selective epitaxial growth.