Cluster Tool E-Beam Residue Removal for Semiconductor Precision
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Solution Overview
Problem
Semiconductor wafer manufacturing processes within cluster tools result in residues that can damage the wafer, trap particulate matter, distort lithographic imaging, and prevent other process chemicals from performing effectively, due to contamination from residue formation during procedures like dry etching and wet etching.
Innovation Solution
Incorporating an electron beam (e-beam) source within the cluster tool to perform e-beam treatments that remove residues formed during manufacturing processes, thereby improving the cleanliness and reducing contamination, and enhancing the precision of semiconductor structures by tuning the etching profile.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple manufacturing procedures are performed within a cluster tool, then manufacturing precision and contamination control are improved, but device complexity and process time increase due to residue formation requiring additional cleaning steps
Solution Approach 1:
The patent converts the harmful effect of residue formation into a beneficial cleaning process by using e-beam irradiation. The residues generated during manufacturing procedures are transformed into removable byproducts through electron beam treatment, turning a contaminant problem into a controlled cleaning opportunity that maintains precision without adding complex manual intervention steps
2Manufacturing precision
If multiple manufacturing procedures are performed within a cluster tool, then manufacturing precision is improved, but manufacturing time increases due to residue removal requirements
Solution Approach 1:
The e-beam source enables continuous residue removal during the manufacturing process without interrupting the workflow. Multiple wafers can be processed sequentially with automatic e-beam cleaning between steps, maintaining continuous production flow and eliminating idle time that would occur with manual cleaning interventions
3Manufacturing precision
If e-beam treatment is performed to remove residues, then manufacturing precision and cleanliness are improved, but energy consumption increases
Solution Approach 1:
The system dynamically adjusts e-beam parameters such as electron energy, beam current, and treatment duration based on the specific residue type and wafer processing stage. This optimized parameter control minimizes energy consumption while achieving effective residue removal, preventing excessive energy use that would occur with fixed high-power e-beam settings
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The e-beam treatment effectively removes residues, improves the aspect ratio and verticality of trenches, reduces damage to the wafer, and maintains a clean environment, leading to increased yield and better control over semiconductor structure formation.
Implementation Method 1
an electron beam (e-beam) source configured to perform an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure
Data Source
AI summary
A cluster tool includes a polyhedral transfer chamber, at least one processing chamber, at least one load lock chamber, and an electron beam (e-beam) source. The processing chamber is connected to the polyhedral transfer chamber. The processing chamber is configured to perform a manufacturing procedure to a wafer present therein. The load lock chamber is connected to the polyhedral transfer chamber. The e-beam source is configured to performing an e-beam treatment to the wafer after the wafer is performed the manufacturing procedure.