5V Tolerant CML Transceiver Circuit Design

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Solution Overview

Problem

Current CML transceiver circuits operating at lower supply voltages are vulnerable to signal spikes from circuits with higher supply voltages, leading to potential malfunction and damage due to over-stressing of components like MOSFETs and diodes.

Innovation Solution

A high-voltage tolerant transceiver circuit design that incorporates NMOS transistors with their gates coupled to a low power supply and substrates grounded, along with substrate and bias isolating circuits to prevent drain voltage from exceeding the low voltage supply, thereby protecting components from high-voltage signals.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If AC-coupled CML transceiver operates at lower supply voltage (2.5V), then power consumption and signal integrity are improved, but vulnerability to high-voltage signal spikes (5V) increases causing component damage

Engineering Contradiction:
Improvepower consumptionVSAvoidvulnerability to high-voltage signal spikes
Core Design Contradiction:
Use of energy by moving objectVSReliability

Solution Approach 1:

The patent introduces NMOS transistors as intermediary protective elements between the high-voltage external interface and the low-voltage internal circuitry. These transistors act as voltage-limited switches that allow normal signal passage while blocking damaging high-voltage spikes, thus mediating the conflict between low-voltage operation and high-voltage tolerance

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the voltage parameter handling by using transistors with gate-source voltage clamping. The transistor gates are held at a fixed low voltage potential while sources connect to external pads, creating a voltage threshold that automatically limits the voltage differential across internal components regardless of external voltage conditions

Inventive Principle:
Principle #35Parameter changes

2Reliability

If NMOS transistors are added for high-voltage protection, then reliability against signal spikes is improved, but device complexity increases

Engineering Contradiction:
Improveprotection against signal spikesVSAvoidcircuit structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent segments the transceiver circuit into protected internal blocks and external interface pads, with protective NMOS transistors placed at strategic interface points. This segmentation allows the core functional blocks to remain simple while adding protection only where voltage transitions occur, minimizing overall complexity increase

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The protective NMOS transistors are configured to automatically activate when voltage exceeds safe thresholds, using the voltage spike itself to turn on the protection mechanism. The transistor gates are biased such that normal operation keeps them off, but high-voltage conditions automatically enable them, providing self-regulating protection without external control circuits

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS8378714B25V tolerant circuit for CML transceiver in AC-couple
Publication Date: 2013.02.19 INTEGRATED DEVICE TECH INC
  • US8378714B2 patent drawing
  • US8378714B2 patent drawing
  • US8378714B2 patent drawing

AI summary

A high voltage tolerant transceiver operating at a low voltage is provided, including two input/output pads to receive a receive signal and transmit a transmit signal; a transmitter block to transmit the transmit signal; a receiver block to receive the receive signal and provide an amplified signal; at least one of the transmitter block and the receiver block further comprising at least two NMOS transistors having their gate coupled to a low power supply to receive the low voltage, their substrate coupled to ground, and their source coupled to the input/output pad. Also provided is a circuit to isolate the output of a transmitter from high voltages, including a first transistor and a second transistor. Also provided is a substrate isolating circuit, including a first transistor, a second transistor, and a third transistor so that the substrate voltage is isolated from a high voltage in the pads. Further provided is a bias isolating circuit so that an input bias voltage is isolated from a high voltage in the pads.