CMOS Acoustic Wave Sensor with Embedded Binding Layer
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Solution Overview
Problem
Conventional chemical sensors face fabrication difficulties due to size limitations in device fabrication processes, particularly when integrating acoustic wave devices with CMOS technology for multi-mode sensing applications.
Innovation Solution
A CMOS device configured with a binding layer and sensing components that operate in both surface acoustic wave and bulk acoustic wave modes, utilizing metal layers from the electronic circuitry as electrodes to detect substances in various states, including solid, liquid, and gas, with enhanced sensitivity through multi-mode operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If acoustic wave devices are integrated with CMOS technology for multi-mode sensing applications, then sensing capability and versatility are improved, but fabrication difficulty increases due to size limitations in conventional device fabrication processes
Solution Approach 1:
The patent merges the acoustic wave sensing device with the CMOS electronic circuitry into a single integrated structure. The sensing device is formed within the CMOS device body, combining previously separate components into one unified device that achieves both versatile sensing capability and CMOS-compatible fabrication
Solution Approach 2:
The acoustic wave sensing device is nested within the CMOS device structure. The sensing device, including its electrodes and acoustic wave propagation paths, is embedded inside the CMOS device body, allowing the smaller sensing structure to be contained within the larger electronic circuit platform
2Ease of manufacture
If conventional device fabrication processes are used, then manufacturing simplicity is maintained, but device size and complexity increase
Solution Approach 1:
The patent transitions from planar two-dimensional device layouts to three-dimensional vertical integration. The sensing device is formed in the vertical dimension within the CMOS device body, utilizing the third dimension to reduce the footprint and overall device size while maintaining manufacturing simplicity
3Volume of moving object
If sensing components are embedded within CMOS electronic circuitry, then device compactness and thickness are improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent changes the fabrication parameters and process conditions to accommodate the embedded sensing structure. By adjusting deposition thicknesses, etch depths, and material properties during CMOS fabrication, the sensing components can be precisely formed within the device body without requiring excessive manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables the fabrication of a compact, thin device with reduced manufacturing complexity, capable of accurately detecting minute changes in substances, and determining information such as amount, mass, and type, across different states, with improved sensitivity and detection speed.
Implementation Method 1
An acoustic wave device consisting of a piezoelectric substrate sandwiched between two electrodes can be used as a sensing component that adopts acoustic or mechanical detection mechanism. Particularly, the sensing feature is accomplished by creating acoustic waves through inducing a crystal lattice vibration within the device.
Implementation Method 2
two sets of interdigital transducers (IDT) are provided for converting electric field energy into mechanical wave energy, and then converting the mechanical energy back into the electric filed
Implementation Method 3
at least one binding layer for binding a substance in a matter... Information of the substance can be determined through binding the substance at the binding layer
Data Source
AI summary
A device for determining information of a substance in a matter comprising a substrate layer; an inter-layer dielectric disposed on the substrate layer; an electronic circuitry substantially formed in the inter-layer dielectric and includes a plurality of metal layers with at least one metal layer being used as an inner electrode, a sensing instrument having at least one sensing component that includes a piezoelectric layer and the inner electrode that is positioned adjacent to an inner surface of the piezoelectric layer, and at least one binding layer disposed on the inter-layer dielectric for binding the substance, wherein the sensing component allows the device to determine the information of the substance upon detecting presence of the substance at the binding layer.