CMOS and Compound Semiconductor Integration on Single Substrate
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Complementary metal-oxide semiconductor (CMOS) devices do not integrate well with radio frequency (RF) compound semiconductor devices, leading to increased cost and area consumption when separate logic and RF chips are used.
Innovation Solution
A semiconductor device structure that integrates CMOS and compound semiconductor devices on the same wafer-level substrate, utilizing a substrate, well regions, fins, gate regions, and a support layer to implement a hybrid structure such as a PNP or NPN heterojunction bipolar transistor (HBT) device, allowing both types of devices to share the same substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If CMOS devices and compound semiconductor devices are implemented on separate chips, then device performance and reliability are maintained, but manufacturing cost increases and chip area consumption increases
Solution Approach 1:
The patent merges CMOS logic devices and compound semiconductor RF devices onto a single integrated circuit chip. The structure includes a first region with CMOS devices (p-type and n-type metal-oxide semiconductor transistors) and a second region with compound semiconductor devices (such as GaAs or InP based RF devices), both fabricated on the same semiconductor substrate. This integration eliminates the need for separate logic and RF chips, reducing manufacturing costs while maintaining the performance advantages of both device types.
2Ease of manufacture
If CMOS devices and compound semiconductor devices are implemented on separate chips, then manufacturing process simplicity is maintained, but manufacturing cost increases and productivity decreases
Solution Approach 1:
The patent combines multiple device fabrication processes into a single integrated manufacturing flow. The method includes forming both CMOS and compound semiconductor devices on the same substrate using compatible processing steps such as selective epitaxial growth, ion implantation, and thermal processing. This unified approach increases productivity by producing both logic and RF devices in one manufacturing run, rather than requiring separate production lines.
3Adaptability or versatility
If separate logic and RF chips are used, then device specialization is maintained, but area consumption increases
Solution Approach 1:
The patent integrates logic and RF functions on a single chip, reducing the total area required. The structure places CMOS logic devices in a first region and compound semiconductor RF devices in a second region on the same substrate, with shared support structures and interconnection layers. This consolidation eliminates the need for separate packaging and mounting of discrete chips, significantly reducing the overall system footprint.
4Ease of manufacture
If CMOS and compound semiconductor devices are integrated on the same substrate, then manufacturing cost decreases and area consumption decreases, but device compatibility and integration complexity increase
Solution Approach 1:
The patent applies local quality by creating region-specific structures optimized for different device types. The first region contains CMOS devices with silicon-based materials and specific doping profiles, while the second region contains compound semiconductor devices with III-V materials and different processing requirements. Support layers, isolation structures, and interconnection schemes are locally adapted to each region's needs, enabling heterogeneous integration while maintaining manufacturing feasibility.
Data Source
AI summary
Certain aspects of the present disclosure provide a semiconductor device. One example semiconductor device generally includes a substrate, a well region disposed adjacent to the substrate, a first fin disposed above the well region, a second fin disposed above the substrate, and a gate region disposed adjacent to each of the first fin and the second fin. The semiconductor device may also include at least one third fin disposed above the substrate, a support layer disposed above the at least one third fin, and a compound semiconductor device disposed above the support layer.