CMOS Driver Circuit Using LTPS and Oxide Transistors
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Solution Overview
Problem
Existing display devices face challenges in achieving narrow bezels, high reliability, low power consumption, and novel structures, particularly in driver circuits where conventional techniques are inadequate.
Innovation Solution
A semiconductor device is designed with a first p-type transistor and a second n-type transistor, utilizing polycrystalline silicon and metal oxide layers with different hydrogen diffusion properties, and a CMOS structure incorporating LTPS transistors for low power consumption and high reliability, along with a control circuit for signal inversion and amplification.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If driver circuits are formed using single-polarity transistors, then device complexity is reduced, but reliability and functionality are insufficient
Solution Approach 1:
The patent combines p-type and n-type transistors in a CMOS configuration within the same driver circuit, merging complementary transistor types to achieve both low power consumption and high reliability while maintaining integrated circuit functionality
Solution Approach 2:
The patent uses composite semiconductor structures with LTPS transistors and oxide semiconductor transistors in a CMOS configuration, combining different semiconductor material properties to achieve superior device performance, low power consumption, and high reliability
2Use of energy by moving object
If LTPS transistors are used, then power consumption is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent utilizes the unique electrical parameters of LTPS transistors, particularly their low off-state current characteristics, to achieve low power consumption in the driver circuit while managing the manufacturing complexity through integrated CMOS design
3Reliability
If oxide semiconductor transistors are used, then reliability is improved, but hydrogen diffusion affects performance
Solution Approach 1:
The patent introduces a barrier layer as an intermediary between the oxide semiconductor transistor and hydrogen-containing structures, preventing hydrogen diffusion into the oxide semiconductor while maintaining the reliability benefits of oxide semiconductor transistors
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves a semiconductor device with a narrow bezel, high reliability, low power consumption, and novel structure, enhancing the functionality and performance of display devices.
Implementation Method 1
The first insulating layer is less likely to diffuse hydrogen than the second insulating layer
Data Source
AI summary
A highly functional semiconductor device is provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first semiconductor layer, a first gate electrode, a first electrode, and a second electrode. The second transistor includes a second semiconductor layer, a second gate electrode, a third electrode, and a fourth electrode. The first gate electrode and the second gate electrode are connected to each other, and the second electrode and the third electrode are connected to each other. A first insulating layer, a second insulating layer, and a second semiconductor layer are stacked over the first semiconductor layer. The first insulating layer is less likely to diffuse hydrogen than the second insulating layer. The second insulating layer contains oxide, the first semiconductor layer contains polycrystalline silicon, and the second semiconductor layer contains a metal oxide. The first transistor is a p-channel transistor and the second transistor is an n-channel transistor.