CMOS Gas Sensor Platinum Electrodes Tungsten Heater

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Solution Overview

Problem

Existing gas sensors with metal oxide sensing materials face issues with signal stability due to electrode material drift and thermal insulation challenges, particularly at high temperatures.

Innovation Solution

A gas sensor design incorporating a silicon substrate with integrated CMOS circuitry, platinum electrodes, and a tungsten heater, along with a heat spreading structure, to maintain high signal stability and temperature homogeneity, utilizing a manufacturing process that includes Damascene and sputtering techniques for precise structure formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If tungsten or aluminum electrodes are used, then manufacturing cost is reduced, but signal stability deteriorates due to electrode drift

Engineering Contradiction:
Improvesignal stabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent changes the material parameter of the electrodes from conventional materials (tungsten, aluminum) to platinum, which has superior chemical inertness and stability at high temperatures. This material substitution resolves the contradiction by prioritizing signal stability over manufacturing cost, as platinum electrodes do not drift and maintain reliable measurements throughout the sensor's operational lifetime.

Inventive Principle:
Principle #35Parameter changes

2Power

If heater cross section is increased, then heating power is improved, but device size and voltage requirements increase

Engineering Contradiction:
Improveheating powerVSAvoiddevice size
Core Design Contradiction:
PowerVSLength of moving object

Solution Approach 1:

The patent changes the material parameter of the heater from conventional materials to tungsten, which has exceptionally high electrical conductivity and melting point. This enables the heater to generate sufficient heating power (300-600°C) through a small cross-sectional area, resolving the contradiction by achieving high power density without increasing device size or voltage requirements.

Inventive Principle:
Principle #35Parameter changes

3Loss of energy

If membrane thickness is reduced for better thermal insulation, then thermal insulation is improved, but mechanical strength deteriorates

Engineering Contradiction:
Improvethermal insulationVSAvoidmembrane strength
Core Design Contradiction:
Loss of energyVSStrength

Solution Approach 1:

The patent employs a composite membrane structure combining multiple materials with different properties. The membrane includes thermally insulating layers (such as silicon dioxide or silicon nitride) combined with mechanically strengthening layers, creating a composite structure that simultaneously achieves excellent thermal insulation and sufficient mechanical strength to support the sensing material and withstand operational stresses.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a highly stable gas sensor with reduced drift and improved temperature uniformity, enabling reliable operation at high temperatures and low voltage, suitable for mobile applications.

Implementation Method 1

a heater of a material that comprises at least 90% of tungsten is arranged in or on the membrane at the location of the patch of sensing material

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

electrodes are arranged on the membrane and are in electrical contact with the patch of sensing material in order to measure a signal indicative of the sensing material's electrical conductivity

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentEP2762866B1CMOS gas sensor and method for manufacturing the same
Publication Date: 2017.08.09 SENSIRION AG
  • EP2762866B1 patent drawingFigure 1~3
  • EP2762866B1 patent drawingFigure 4~7

AI summary

A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the membrane (13) and in contact with electrodes (3) of platinum. A heater (5) of tungsten is located in or on the membrane (13) at the location of the patch (2) of metal-oxide sensing material. Combining platinum electrodes (3) with a tungsten heater (5) on top of a CMOS structure provides a gas sensor of high reliability and stability.