CMOS Image Sensor Charge Transfer via Central Conversion Unit
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Solution Overview
Problem
Conventional CMOS image sensors face inefficiencies in charge transfer due to long transfer distances between the charge accumulation unit and the charge voltage conversion unit, leading to deteriorated transfer characteristics and reduced saturation electrons, requiring increased masks and implantation steps which complicate the process and reduce electron saturation.
Innovation Solution
The solution involves a solid-state imaging element where the charge voltage conversion unit is connected to the center of the charge accumulation unit, with a configuration of electrodes forming a transfer gradient, including recessed electrodes to minimize transfer distance and enhance saturation electron count, allowing for parallel arrangement of photoelectric conversion and voltage conversion units, thereby improving charge transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the charge voltage conversion unit is connected to a position other than the center of the charge accumulation unit, then the pixel layout flexibility is improved, but the transfer distance becomes long and charge transfer efficiency deteriorates
Solution Approach 1:
The patent applies asymmetry by positioning the charge voltage conversion unit at the center of the charge accumulation unit, creating a symmetric radial electrode arrangement. This central positioning ensures that all electrodes are equidistant from the conversion unit, optimizing charge transfer paths and eliminating the transfer efficiency deterioration that would occur with asymmetric/off-center positioning.
2Area of stationary object
If the transfer distance is increased, then the pixel area can be reduced, but the number of masks and implantation steps must be increased and transfer characteristics deteriorate
Solution Approach 1:
The patent segments the charge accumulation unit into multiple regions with multiple electrodes arranged radially around the central charge voltage conversion unit. This segmentation allows for optimized charge collection from different regions simultaneously, maintaining efficient transfer characteristics while enabling compact pixel area without requiring additional masks or implantation steps.
Solution Approach 2:
The patent implements a nested structure where multiple electrodes are arranged concentrically around the central charge voltage conversion unit, with each electrode positioned at a specific radius. This nested radial arrangement allows compact integration of multiple charge collection paths within a small pixel area, avoiding the need for increased manufacturing complexity while maintaining optimal transfer characteristics.
3Adaptability or versatility
If the transfer distance is increased, then the pixel layout flexibility is improved, but the number of saturation electrons in unit area decreases
Solution Approach 1:
The patent applies local quality by creating a non-uniform electrode arrangement where electrodes are positioned at different radial distances from the central charge voltage conversion unit. This allows different regions of the charge accumulation unit to have optimized local electric field characteristics, maximizing charge collection efficiency and saturation electron density in each local region while maintaining overall compact pixel area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves charge transfer efficiency and increases the number of saturation electrons, simplifying the pixel layout and reducing noise by minimizing transfer distance and allowing for parallel arrangement of units, thus enhancing imaging performance.
Implementation Method 1
a photoelectric conversion unit that generates a charge by photoelectric conversion according to an amount of incident light
Implementation Method 2
A plurality of electrodes that forms a transfer gradient to transfer the charge accumulated in the charge accumulation unit
Data Source
AI summary
The present technology relates to a solid-state imaging element, an imaging device, and an electronic device that can improve transfer efficiency of a charge accumulation unit (MEM) and can increase the number of saturation electrons Qs. In a case where a charge voltage conversion unit (FD) is connected to a center of a charge accumulation unit (MEM) in each pixel and pixels are arrayed in an array, a column in which photoelectric conversion units (PD) are arrayed and a column including charge voltage conversion units (FD) and pixel transistors are arrayed in parallel. The present technology can be applied to a CMOS image sensor.


