CMOS Image Sensor LTO Layer Removal and Microlens Protection
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Solution Overview
Problem
The existing manufacturing methods for CMOS image sensors face issues such as peeling and crack phenomena of the low temperature oxide (LTO) layer, which can damage microlenses and increase the optical path length to the photodiode, and also lead to particle attachment during the wafer sawing process.
Innovation Solution
The method involves forming an image sensor without an LTO layer, using a titanium tungsten layer as an adhesive layer and a gold bump to connect the pad, and thinly depositing an LTO layer over the microlenses to prevent damage and particle attachment, with the LTO layer being selectively removed using a fluoric acid-based vapor etching process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an LTO layer is formed over the microlenses to protect them during manufacturing, then microlens damage is prevented, but the LTO layer causes peeling and crack phenomena that damage the microlenses
Solution Approach 1:
The patent removes the LTO layer completely from the manufacturing process. Instead of forming an LTO layer over the microlenses, the invention uses alternative protective measures such as forming a protective film over the color filter and using a specific sequence of forming the microlenses after other layers are in place, thereby eliminating the peeling and crack issues while still protecting the microlenses
Solution Approach 2:
The patent forms a protective film over the color filter before forming the microlenses. This preliminary protective layer is in place before the microlenses are created, providing protection during subsequent manufacturing steps without causing the peeling and crack problems that occur when LTO is formed after the microlenses
2Reliability
If an LTO layer is formed over the microlenses, then protection during manufacturing is provided, but the optical path length to the photodiode increases
Solution Approach 1:
The patent eliminates the LTO layer entirely from the structure. By not forming the LTO layer over the microlenses, the optical path from the microlens to the photodiode remains short and direct, improving optical performance while still providing necessary protection through alternative methods such as the protective film formed over the color filter
3Productivity
If wafer sawing is performed without protective measures, then manufacturing efficiency is maintained, but particle attachment occurs on the microlenses
Solution Approach 1:
The patent forms a protective film over the color filter and structures before the wafer sawing process. This preliminary protective layer prevents particle attachment during sawing while allowing the process to proceed efficiently. The protective film acts as a barrier that can be removed or integrated into the final structure without compromising manufacturing productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents peeling and crack phenomena, minimizes optical path length, and avoids microlens damage and particle attachment, enabling more efficient manufacturing of CMOS image sensors with improved performance.
Implementation Method 1
the LTO layer being selectively removed using a fluoric acid-based vapor etching process
Data Source
AI summary
An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.


