CMOS Inverter Circuit With Segmented PMOS for P-Channel Shift

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Solution Overview

Problem

CMOS inverter circuits face difficulties in normal operation due to the rightward shift of P-channel transistor characteristics, which disrupts the logic gate functionality required for digital signal processing.

Innovation Solution

A CMOS inverter circuit design comprising multiple PMOS and NMOS transistors, where the channel widths of PMOS transistors can be varied, and additional NMOS transistors are connected in series to adjust voltages and ensure proper logic gate operation even when P-channel characteristics are shifted.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional CMOS inverter circuit with single PMOS and NMOS transistors is used, then the circuit structure is simple, but the inverter cannot operate normally when P-channel characteristics shift to the right

Engineering Contradiction:
Improveinverter operation reliabilityVSAvoidcircuit structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The single PMOS transistor is divided into two separate PMOS transistors (first PMOS and second PMOS) connected in series. This segmentation allows independent optimization of each transistor's characteristics, enabling the circuit to compensate for P-channel shifts and maintain reliable inverter operation even when characteristics deviate from ideal specifications.

Inventive Principle:
Principle #1Segmentation

2Reliability

If the channel width of PMOS transistors is adjusted to compensate for characteristic shifts, then inverter operation is improved, but the device design complexity increases

Engineering Contradiction:
Improvelogic gate operation normalityVSAvoiddesign parameter complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

Different channel widths are assigned to different PMOS transistors based on their specific positions and functional requirements in the circuit. The first PMOS and second PMOS have different channel widths optimized for their respective roles, allowing localized compensation for P-channel characteristic shifts without requiring complex global adjustments.

Inventive Principle:
Principle #3Local quality

3Reliability

If additional NMOS transistors are added in series to adjust voltages, then inverter characteristics are improved, but the number of components increases

Engineering Contradiction:
Improvevoltage control accuracyVSAvoidtransistor quantity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The single NMOS transistor is segmented into two NMOS transistors (first NMOS and second NMOS) connected in series. This segmentation provides finer voltage control capability, allowing more precise adjustment of voltage levels to compensate for P-channel shifts and improve inverter characteristics while maintaining a manageable circuit structure.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20240348238A1CMOS inverter circuit
Publication Date: 2024.10.17 HOSEO UNIV ACADEMIC COOP FOUND
  • US20240348238A1 patent drawing
  • US20240348238A1 patent drawing
  • US20240348238A1 patent drawing

AI summary

A CMOS inverter circuit includes a first and second PMOS transistor connected in series to a power supply voltage (VDD) and a first NMOS transistor connected in series with the second PMOS transistor and to ground (GND). All transistors receive the same input signal.This configuration enables normal logic gate operation even when the P-channel characteristics of the PMOS transistors are shifted. The channel widths of the first and second PMOS transistors can be varied to adjust circuit performance.