CMOS Image Sensor Pixel Electrical Barrier Height Optimization
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Solution Overview
Problem
In solid-state imaging apparatuses, the blooming phenomenon occurs due to high sensitivity pixels being saturated earlier, leading to coloration and degradation of image quality, especially when using white pixels in addition to RGB pixels, as they overflow electric charges to adjacent pixels, disrupting linearity and white balance.
Innovation Solution
The apparatus employs a pixel array configuration where the first pixel (corresponding to color components) and second pixel (with higher sensitivity) have different electrical barriers, allowing for controlled discharge of unnecessary electric charges, with the second pixel's barrier being deeper to prevent saturation and overflow, thereby suppressing the blooming phenomenon.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If high sensitivity pixels (W pixels) are used in addition to RGB pixels, then image brightness in dark places is improved, but blooming phenomenon occurs causing coloration and image quality degradation
Solution Approach 1:
The pixel array is segmented into different types of pixels (first pixels with color components and second pixels with higher sensitivity) that have different electrical barrier heights. This segmentation allows each pixel type to be optimized for its specific function while preventing cross-contamination of electric charges between pixels.
Solution Approach 2:
Different pixels are given different local properties through varying electrical barrier heights. Second pixels (high sensitivity pixels) have deeper electrical barriers compared to first pixels, creating local quality differences that prevent saturation and blooming in high sensitivity pixels while maintaining their enhanced light capture capability.
2Measurement precision
If second pixels with higher sensitivity are used, then sensitivity to incident light is improved, but electric charges saturate earlier causing overflow to adjacent pixels
Solution Approach 1:
The electrical barrier height parameter is changed for different pixel types. Second pixels are configured with deeper electrical barriers (higher potential walls) compared to first pixels, which prevents electric charge saturation and overflow while maintaining high sensitivity to incident light through optimized photoelectric conversion units.
3Ease of manufacture
If all pixels have the same electrical barrier height, then manufacturing is simplified, but coloration occurs due to blooming phenomenon in high sensitivity pixels
Solution Approach 1:
Different pixels are given different local properties through varying electrical barrier heights. Second pixels (high sensitivity pixels) have deeper electrical barriers compared to first pixels, creating local quality differences that prevent saturation and blooming in high sensitivity pixels while maintaining their enhanced light capture capability.
Solution Approach 2:
The pixel array is segmented into different types of pixels (first pixels with color components and second pixels with higher sensitivity) that have different electrical barrier heights. This segmentation allows each pixel type to be optimized for its specific function while preventing cross-contamination of electric charges between pixels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves coloration and image quality by maintaining linearity across all pixels, preventing coloration and degradation, even in low-light conditions, by ensuring that electric charges are properly managed and do not overflow, thus enhancing the overall image quality.
Implementation Method 1
a first photoelectric conversion unit that generates electric charges according to an amount of incident light
Data Source
AI summary
The present technology relates to a solid-state imaging apparatus and an electronic apparatus that makes it possible to improve coloration and improve image quality. The solid-state imaging apparatus is formed so that, in a pixel array unit in which combinations of a first pixel corresponding to a color component of a plurality of color components and a second pixel having higher sensitivity to incident light as compared with the first pixel are two-dimensionally arrayed, a first electrical barrier formed between a first photoelectric conversion unit and a first unnecessary electric charge drain unit in the first pixel, and a second electrical barrier formed between a second photoelectric conversion unit and a second unnecessary electric charge drain unit in the second pixel have different heights, respectively. The present technology can be applied to, for example, a CMOS image sensor.


