CMOS Image Sensor Pixel Separation Layout for Fine-Pitch Low-Noise Pixels
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current CMOS image sensors face challenges in efficiently forming fine patterns with high pitch, which affects their performance and integration density, particularly in consumer electronic devices where high resolution and low power consumption are required.
Innovation Solution
The proposed CMOS image sensor design includes a substrate with a pixel separation zone that defines regions with parallel parts and floating diffusion regions, along with a source follower gate, to enhance photoelectric conversion and signal processing, allowing for improved integration density and reduced noise.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional CMOS image sensor designs are used, then manufacturing is simpler, but fine pattern formation with high pitch is difficult
Solution Approach 1:
The pixel separation zone is divided into multiple parallel parts (first parts and second parts) extending in the first direction, with floating diffusion regions positioned between them. This segmentation allows each part to contribute to fine pattern formation while maintaining manufacturability through modular replication.
Solution Approach 2:
The patent introduces a multi-dimensional arrangement where pixel separation zones extend in the first direction with parallel parts, while floating diffusion regions are positioned in the second direction between these parts. This dimensional arrangement enables fine pitch patterns without excessive manufacturing complexity.
2Quantity of substance
If integration density is increased, then device performance improves, but noise increases
Solution Approach 1:
Floating diffusion regions are extracted and positioned in the second direction between the parallel parts of the pixel separation zone. This extraction allows charge signal collection to be separated from the main pixel array, enabling high integration density while isolating noise-generating elements.
Solution Approach 2:
The floating diffusion regions act as intermediary elements between adjacent pixel regions, positioned in the second direction between parallel parts of the pixel separation zone. These intermediaries enable signal collection while electrically isolating adjacent pixels, thus reducing noise even at high integration densities.
3Reliability
If photoelectric conversion efficiency is enhanced, then image quality improves, but device complexity increases
Solution Approach 1:
The pixel separation zone structure serves multiple functions: it defines pixel regions, provides charge isolation through floating diffusion regions, and enables fine pattern formation. This multi-functionality enhances photoelectric conversion efficiency without proportionally increasing device complexity.
Solution Approach 2:
The patent merges the pixel separation function with charge collection function by integrating floating diffusion regions within the pixel separation zone structure. This combination improves photoelectric conversion efficiency while avoiding the need for separate complex charge collection mechanisms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the formation of fine patterns with high pitch, increasing integration density and reducing noise, thereby enhancing the performance and efficiency of CMOS image sensors in consumer electronic devices.
Implementation Method 1
first and second photoelectric conversion devices arranged in the first direction on each, or one or more, of the first and second pixel regions in the substrate
Data Source
AI summary
Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.